Results 251 to 260 of about 14,908,555 (316)

Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing

IEEE Electron Device Letters, 2021
In this work, a new operation scheme is developed to improve the state stability of multi-level resistive random-access memory (RRAM) array. We found that the state instability after programming is mainly derived from the excessive oxygen vacancies ...
Yu-Lin Feng, Peng Huang, Yudi Zhao, Yihao Shan, Yizhou Zhang, Zheng Zhou, Lifeng Liu, Xiao-Yan Liu, Jin-Feng Kang   +8 more
semanticscholar   +1 more source

Reliable and Robust Two-Dimensional Perovskite Memristors for Flexible-Resistive Random-Access Memory Array.

ACS Nano
Two-dimensional (2D) halide perovskites have become a promising class of memristive materials due to their low power consumption, compositional versatility, and microstructural anisotropy in electronics.
Seung Ju Kim, I. Im, J. Baek, Sung Hyuk Park, Jae Young Kim, J. J. Yang, H. Jang   +6 more
semanticscholar   +1 more source

Selector Failure Detection for Resistive Random Access Memories

2021 IEEE International Symposium on Information Theory (ISIT), 2021
The sneak path (SP) interference problem in resistive random access memory (ReRAM) severely affects the data storage reliability. Recent works showed that the occurrence of the SP is highly related to the selector failures (SFs) in the resistive memory arrays.
Guanghui Song, Kui Cai 0001, Ce Sun, Xingwei Zhong, Jun Cheng 0001   +4 more
openaire   +2 more sources

Engineering of defects in resistive random access memory devices

, 2020
Defects are essential to switch the resistance states in resistive random-access memory (RRAM) devices. Controlled defects in such devices can lead to the stabilization of the switching performance, which is useful for high-density memory and ...
W. Banerjee, Qi Liu, H. Hwang
semanticscholar   +1 more source

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects

Physica Status Solidi (a), 2019
Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory (RRAM) gradually enters the field of view due to its simple structure, fast program/erase speed, low power consumption, and so on ...
Hong Wang, Xiaobing Yan
semanticscholar   +1 more source

Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array

IEEE Electron Device Letters, 2021
We demonstrate a 1MBit array of 1-Transistor-8-Resistive RAM (1T8R) memory fabricated using a foundry logic technology. Using a gradual SET/RESET programming scheme, sixteen conductance levels are stored in each RRAM, achieving 1T8R array with 4 bits per
E. Hsieh, X. Zheng, B. Le, Y.C. Shih, R. Radway, M. Nelson, S. Mitra, S. Wong   +7 more
semanticscholar   +1 more source

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

Advanced Electronic Materials, 2020
This study demonstrates a synergistic approach of dual nanostructure engineering to improve the performance of AlOx‐based resistive random access memory (RRAM) devices.
S. Maikap, W. Banerjee
semanticscholar   +1 more source

Noise in Resistive Random Access Memory Devices

2020
This chapter is arranged as a bottom-up journey through the most important noise type in emerging resistive random access memory (RRAM) devices: random telegraph noise (RTN). In the last 10 years, RRAMs have gained enormous popularity and attracted the attention of many researchers and industries throughout the world.
openaire   +1 more source

Access Strategies for Resistive Random Access Memory (RRAM)

ECS Transactions, 2012
In an RRAM array, it is important to avoid sneak current paths that result in inadvertent, non-negligible voltage and current inputs to unselected cells. At the same time, care must be taken not to allow excessive voltages or currents to selected cells, which could result in damage.
Frederick T. Chen, Yu-Sheng Chen, Heng-Yuan Lee, Wei-Su Chen, Pei-Yi Gu, Tai-Yuan Wu, Chen-Han Tsai, Yi-Ying Liao, Pang-Shiu Chen, Shyh-Shyuan Sheu, Pi-Feng Chiu, Wen-Ping Lin, Chih-He Lin, Ming-Jinn Tsai, Tzu-Kun Ku   +14 more
openaire   +1 more source

Resistive Random Access Memory: A Review of Device Challenges

IETE Technical Review, 2019
With scaling, existing charge-based memory technologies exhibit limitations due to charge leaking away easily in a smaller device. Therefore, non-charge based memory technologies such as Resistive Random Access Memory (RRAM) become promising for future ...
Varshita Gupta, S. Kapur, Sneh Saurabh, Anuj Grover   +3 more
semanticscholar   +1 more source