Results 261 to 270 of about 14,908,555 (316)

Oxygen Vacancy Density Dependence with a Hopping Conduction Mechanism in Multilevel Switching Behavior of HfO2-Based Resistive Random Access Memory Devices

ACS Applied Electronic Materials, 2020
We report a switching model that directly explains the change in activation energy (EAC) at different RESET stop voltages (Vstop) in HfO2-based resistive random access memory devices.
D. Loy, P. A. Dananjaya, Somsubhra Chakrabarti, Kuan-Hong Tan, S. C. W. Chow, E. Toh, W. Lew   +6 more
semanticscholar   +1 more source

Flexible and Waterproof Resistive Random‐Access Memory Based on Nitrocellulose for Skin‐Attachable Wearable Devices

Advanced Functional Materials, 2019
Memory for skin‐attachable wearable devices for healthcare monitoring must meet a number of requirements, including flexibility and stability in external environments. Among various memory technologies, organic‐based resistive random‐access memory (RRAM)
Jin Hyeok Lee, Sung Pyo Park, Kyungho Park, Hyun Jae Kim   +3 more
semanticscholar   +1 more source

Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory

2015 45th European Solid State Device Research Conference (ESSDERC), 2015
In this paper we explore the features of complex anomalous Random Telegraph Noise (aRTN) in TiN/Ti/HfO 2 /TiN Resistive Random Access Memory (RRAM) devices. Careful systematic experiment, dedicated characterization techniques, and physics-based simulations are exploited to gain insights into the physics of this phenomenon. The RTN parameters (amplitude
PUGLISI, Francesco Maria, LARCHER, Luca, PADOVANI, ANDREA, PAVAN, Paolo   +3 more
openaire   +3 more sources

Resistive Random Access Memory Variability and Its Mitigation Schemes

Journal of Low Power Electronics, 2017
Peer ...
Pouman, Peyman, Amat Bertran, Esteve, Hamdioui, Said, Rubio Sola, Jose Antonio   +3 more
openaire   +2 more sources

A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices

Nature Electronics, 2021
Je-Min Hung, Cheng-Xin Xue, Hui-Yao Kao, Yen-Hsiang Huang, Fu-Chun Chang, Sheng-Po Huang, Ta-Wei Liu, Chuan-Jia Jhang, Chin-I Su, W. Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, M. Ho, Chung-Cheng Chou, Y. Chih, T. Chang, Meng-Fan Chang   +18 more
semanticscholar   +1 more source

Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips

Science China Information Sciences, 2023
Yuyi Liu, Bin Gao, Jianshi Tang, Hua-Qiang Wu, H. Qian   +4 more
semanticscholar   +1 more source

Resistive random access memory

2017
CHANG TING-CHANG, CHANG KUAN-CHANG, TSAI TSUNG-MING, SHIH CHIH-CHENG, PAN CHIH-HUNG   +4 more
  +7 more sources

Review on role of nanoscale HfO2 switching material in resistive random access memory device

Emergent Materials, 2022
Napolean A, Sivamangai Nm, R. S., N. R, N. N, Kamalnath S, A. N   +6 more
semanticscholar   +1 more source

(Invited) Environmental Resistance of Resistive Random Access Memory

ECS Meeting Abstracts, 2016
Environmental resistance of memory devices must be clarified for putting them into practical use. This should be emphasized in particular for resistance random access memory (ReRAM), which switching mechanism is still unclear, because responses to environmental stresses are closely related to the mechanism.
openaire   +1 more source

A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

Nature Electronics, 2020
Cheng-Xin Xue, Yen-Cheng Chiu, Ta-Wei Liu, Tsung-Yuan Huang, Je-Syu Liu, Ting-Wei Chang, Hui-Yao Kao, Jing-Hong Wang, Shih-Ying Wei, Chun-Ying Lee, Sheng-Po Huang, Je-Min Hung, Shih-Hsih Teng, Wei-Chen Wei, Yi-Ren Chen, Tzu-Hsiang Hsu, Yen-Kai Chen, Yun-Chen Lo, Tai-Hsing Wen, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, M. Ho, C. Su, Chung-Cheng Chou, Y. Chih, Meng-Fan Chang   +27 more
semanticscholar   +1 more source