Results 101 to 110 of about 1,933,006 (329)

Noise on resistive switching: a Fokker–Planck approach [PDF]

open access: yes, 2016
We study the effect of internal and external noise on the phenomenon of resistive switching. We consider a non-harmonic external driving signal and provide a theoretical framework to explain the observed behavior in terms of the related Fokker–Planck ...
Fierens, Pablo Ignacio   +2 more
core   +2 more sources

Intein‐based modular chimeric antigen receptor platform for specific CD19/CD20 co‐targeting

open access: yesMolecular Oncology, EarlyView.
CARtein is a modular CAR platform that uses split inteins to splice antigen‐recognition modules onto a universal signaling backbone, enabling precise, scarless assembly without re‐engineering signaling domains. Deployed here against CD19 and CD20 in B‐cell malignancies, the design supports flexible multi‐antigen targeting to boost T‐cell activation and
Pablo Gonzalez‐Garcia   +9 more
wiley   +1 more source

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

open access: yesNanomaterials, 2020
Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode.
C. Mahata, Myounggon Kang, Sungjun Kim
semanticscholar   +1 more source

Class IIa HDACs forced degradation allows resensitization of oxaliplatin‐resistant FBXW7‐mutated colorectal cancer

open access: yesMolecular Oncology, EarlyView.
HDAC4 is degraded by the E3 ligase FBXW7. In colorectal cancer, FBXW7 mutations prevent HDAC4 degradation, leading to oxaliplatin resistance. Forced degradation of HDAC4 using a PROTAC compound restores drug sensitivity by resetting the super‐enhancer landscape, reprogramming the epigenetic state of FBXW7‐mutated cells to resemble oxaliplatin ...
Vanessa Tolotto   +13 more
wiley   +1 more source

Mechanism for bipolar resistive switching in transition metal oxides

open access: yes, 2010
We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale.
Acha, C.   +5 more
core   +1 more source

Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution [PDF]

open access: yes, 2014
Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications.
MacLaren, DA   +2 more
core   +1 more source

Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications [PDF]

open access: yesScientific Reports, 2019
In this paper, the resistive switching and neuromorphic behaviour of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied.
A. Minnekhanov   +8 more
semanticscholar   +1 more source

Strength through diversity: how cancers thrive when clones cooperate

open access: yesMolecular Oncology, EarlyView.
Intratumor heterogeneity can offer direct benefits to the tumor through cooperation between different clones. In this review, Kuiken et al. discuss existing evidence for clonal cooperativity to identify overarching principles, and highlight how novel technological developments could address remaining open questions.
Marije C. Kuiken   +3 more
wiley   +1 more source

A Zeno Paradox: Some Well-known Nonlinear Dopant Drift Memristor Models Have Infinite Resistive Switching Time [PDF]

open access: yesRadioengineering, 2023
There are nonlinear drift memristor models utilizing window functions in the literature. The resistive memories can also be modeled using memristors. If the memristor’s resistance switches from its minimum value to its maximum value or from its maximum ...
R. Mutlu, T. D. Kumru
doaj  

Resistive switching in ultra-thin La0.7Sr0.3MnO3 / SrRuO3 superlattices

open access: yes, 2014
Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved.
Johan Vanacken   +3 more
core   +1 more source

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