Results 121 to 130 of about 84,204 (350)

Organolead Halid Perovskites: Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching (Adv. Mater. 31/2016) [PDF]

open access: bronze, 2016
Jae-Ho Choi   +14 more
openalex   +1 more source

Al–Cu Composite Casting of Laser‐Deoxidized Copper: Bonding, Interfacial Chemistry, and Thermal Conductivity

open access: yesAdvanced Engineering Materials, EarlyView.
This study investigates laser‐based oxide removal of Cu inserts in oxygen‐free conditions and examines long‐term oxidation kinetics and surface chemistry under different atmospheres via X‐ray photoelectron spectroscopy. Al–Cu compound casting with differently oxidized surfaces is performed, and intermetallic phase formation, morphology, and thermal ...
Timon Steinhoff   +9 more
wiley   +1 more source

Temperature Dependent Studies to Understand the Mechanism of Switching in Resistive Random Access Memory Devices [PDF]

open access: bronze, 2013
Branden Long   +6 more
openalex   +1 more source

Variability and power enhancement of current controlled resistive switching devices

open access: hybrid, 2023
Guillermo Vinuesa   +12 more
openalex   +2 more sources

Corrosion and Process Analysis of a Preoxidized MgO Recyclate‐Based Cermet Anode in Laboratory‐Scale Na‐Cryolite Molten Salt Electrolysis of Aluminum at 1000°C

open access: yesAdvanced Engineering Materials, EarlyView.
EDX elemental map of the pre‐oxidized MgO–steel cermet anode cross section after electrolysis. The development of inert anodes for aluminum electrolysis remains challenging due to the high corrosivity of cryolite‐based melts at 950°C–1000°C. This study investigates the corrosion and process behavior of a carbon‐free MgO–steel cermet anode derived from ...
Alexander Adamczyk   +7 more
wiley   +1 more source

Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

open access: yesAdvanced Electronic Materials, 2018
Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here.
Jingon Jang   +5 more
doaj   +1 more source

Programmable ferroelectric tunnel memristor

open access: yesFrontiers in Physics, 2014
We report an analogously programmable memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling.
Andy eQuindeau   +2 more
doaj   +1 more source

Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor

open access: yesActa Physica Sinica, 2018
Resistance random access memory is regarded as one of the most promising candidates for the future nonvolatile memory applications due to its good endurance, high storage density, fast erase speed and low power consumption. As one of the most important transition-metal oxides, the anatase TiO2 has received intense attention due to its inexpensive cost,
null Yu Zhi-Qiang   +4 more
openaire   +1 more source

In Situ Constructed Magnetic Core‐Shell Hydrogen‐Bonded Organic Framework‐on‐Metal–Organic Framework Structure: an Efficient Catalyst for Peroxymonosulfate Activation

open access: yesAdvanced Functional Materials, EarlyView.
In this work, a magnetic core‐shell catalyst (HOF‐on‐Fe3O4/ZIF‐67) is successfully synthesized, consisting of a metal–organic framework (ZIF‐67) with magnetic Fe3O4 as the core and a porous hydrogen‐bonded organic framework (HOF) as the shell. The catalyst efficiently activated peroxymonosulfate, resulting in rapid and effective removal of water ...
Yingying Du   +4 more
wiley   +1 more source

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