Results 131 to 140 of about 84,204 (350)
This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner +9 more
wiley +1 more source
Electrical switching properties of Ag2S/Cu3P under light and heat excitation
In this paper, we prepared and investigated the electrical switching behaviors of Cu3P/Ag2S heterojunction in the absence/presence of light/heat excitation. The structure exhibited bipolar memristor characteristics.
Xin Guo +5 more
doaj +1 more source
Resistive Switching Characteristics of Hafnium Oxide Thin Films Sputtered at Room Temperature [PDF]
Yong Han +3 more
openalex +1 more source
Revelation of resistive switching mechanism in AlOx based RRAM device [PDF]
Liping Fu +3 more
openalex +1 more source
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their functionality are
Dirkmann, Sven +2 more
core +1 more source
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source
Field-Induced Resistive Switching in Metal-Oxide Interfaces
We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal ...
Baikalov, A. +8 more
core +2 more sources
Nanoscale Resistive Switching in Ultrathin PbZr0.2Ti0.8O3–La0.7Sr0.3MnO3 Bilayer [PDF]
Tino Band +4 more
openalex +1 more source

