Results 131 to 140 of about 1,933,006 (329)
Resistively Switching Chalcogenides [PDF]
Rainer Waser, Matthias Wuttig
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An idea of designing novel sensors is proposed by creating appropriate Schottky barriers and vacancies between isomorphous Core‐CuOii/ Shell‐CuOi secondary microspheres and enhancing catalytic and spill‐over effects, and electronegativity via spontaneous biphasic separation, self‐assembly, and trace‐Ni‐doping.
Bala Ismail Adamu +8 more
wiley +1 more source
Simultaneous resistive switching and rectifying effects firstly observed in a MOF single-crystal material. Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for ...
Zizhu Yao +8 more
semanticscholar +1 more source
Resistive Switching in Nanodevices
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains unknown. We show that the different resistive states are due to different spontaneously charged states, characterized
Raebiger, Hannes +3 more
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Screen‐Printed Flexible Piezoelectric Force Sensor Array with Electromagnetic Interference Shielding
This article introduces a flexible screen‐printed piezoelectric sensor array designed for low‐frequency healthcare applications such as tactile sensing and cardiovascular monitoring. The device integrates interface electronics enabling the simultaneous acquisition of up to 128 signals, along with flexible EMI shielding that significantly reduces noise ...
Joseph Faudou +6 more
wiley +1 more source
Memristive switching of MgO based magnetic tunnel junctions
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state,
Krzysteczko, P., Reiss, G., Thomas, A.
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Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM.
Resistive random-access memory (RRAM) devices have attracted broad interest as promising building blocks for high-density nonvolatile memory and neuromorphic computing applications.
Jihang Lee +4 more
semanticscholar +1 more source
Inflammatory Response‐Inspired Thermochromic Shield for Pneumatic Structures
A thermochromic shield for pneumatic structures is developed, using anhydrous sodium acetate powder and thermochromic pigment‐included solution. In this shield composed of three layers, the exothermic and thermochromic reactions, followed by the mixture of both components, occur promptly with an incident of penetrating damage as a sign of initial ...
Hyun Jae Lee, Ryuma Niiyama
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In this work, a magnetic core‐shell catalyst (HOF‐on‐Fe3O4/ZIF‐67) is successfully synthesized, consisting of a metal–organic framework (ZIF‐67) with magnetic Fe3O4 as the core and a porous hydrogen‐bonded organic framework (HOF) as the shell. The catalyst efficiently activated peroxymonosulfate, resulting in rapid and effective removal of water ...
Yingying Du +4 more
wiley +1 more source
Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor
Resistance random access memory is regarded as one of the most promising candidates for the future nonvolatile memory applications due to its good endurance, high storage density, fast erase speed and low power consumption. As one of the most important transition-metal oxides, the anatase TiO2 has received intense attention due to its inexpensive cost,
null Yu Zhi-Qiang +4 more
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