Results 211 to 220 of about 84,204 (350)

Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film [PDF]

, 2017
Sandeep Munjal, Neeraj Khare
openalex   +1 more source

Copper‐Based Crystalline‐Metallic Glass Composite Thin Films: A Novel Material with Enhanced Strength and Thermally Stable Nanotwins

Advanced Functional Materials, EarlyView.
A Cu‐based crystal‐glass composite with high‐density twins is identified by a fast screening technique using combinatorial sputtering together with XRD and nanoindentation mapping. This bamboo‐like structure demonstrates homogenous plastic flow and retains high strength during in situ high temperature tests, up to 1 GPa at 550°C, owing to those ...
Chunhua Tian, Amit Sharma, Krzysztof Wieczerzak, Alexander Groetsch, Manish Jain, Nicolò Maria della Ventura, Remo Widmer, Fedor F. Klimashin, Johann Michler, Jakob Schwiedrzik, Xavier Maeder   +10 more
wiley   +1 more source

Hysteresis in Perovskite Devices: Understanding the Abrupt Resistive Switching Mechanism. [PDF]

ACS Energy Lett
Alvarez AO, de Boer JJ, Sonneveld L, Bleiji Y, Alarcón-Lladó E, Ehrler B.   +5 more
europepmc   +1 more source

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory [PDF]

, 2014
Meiyun Zhang, Shibing Long, Guo‐Ming Wang, R. Liu, Xiaoxin Xu, Yang Li, Dinlin Xu, Qi Liu, Hangbing Lv, E. Miranda, J. Suñé, Ming Liu   +11 more
openalex   +1 more source

Pseudomonas switch to resistance [PDF]

Genome Biology, 2002
openaire   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Experimental and Theoretical Study of Multifilamentary Resistive Switching in Nanoscale Transition Metal Oxide Films. [PDF]

ACS Omega
Fedotov MI, Klyukina EV, Vankaev AS, Znamenskii AG, Koveshnikov SV.   +4 more
europepmc   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

Advanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Analog Resistive Switching Phenomena in Titanium Oxide Thin-Film Memristive Devices. [PDF]

Materials (Basel)
Islam K, Sultana R, Mroczyński R.
europepmc   +1 more source

Non-exponential resistive switching in Ag₂S memristors: a key to nanometer-scale non-volatile memory devices

, 2015
Ágnes Gubicza, Miklós Csontos, András Halbritter, G. Mihály   +3 more
openalex   +2 more sources