Results 231 to 240 of about 84,204 (350)

The effect of ion-implantation on the resistive switching response of NiO thin films

, 2010
M. N. Saleh, Dinesh Kumar Venkatachalam, Sung-I Kim, K. Belay, R. G. Elliman   +4 more
openalex   +1 more source

Noise-Induced Resistance Broadening in Resistive Switching Memory—Part II: Array Statistics

, 2015
Stefano Ambrogio, Simone Balatti, Vincent McCaffrey, Daniel C. Wang, Daniele Ielmini   +4 more
openalex   +2 more sources

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source

Al filament-induced unipolar resistive switching in sputtered Al-rich AlN memristors with low operating voltage and high memory window. [PDF]

RSC Adv
Xiao A, Zhao L, Yang Y, Jin C, Yang X, Ma L, Tian F, Hu W, Huang Z, Gu H.   +9 more
europepmc   +1 more source

Gourd‐Inspired Design of Unit Cell with Multiple Gradients for Physiological‐Range Pressure Sensing

Advanced Functional Materials, EarlyView.
Gourd‐shaped micro‐dome arrays with coordinated modulus, conductivity, and geometric gradients co‐optimize sensitivity and linearity in piezoresistive tactile sensors. Under pressure, a solid upper dome embeds into a porous lower dome, triggering rapid contact‐area growth and series‐to‐parallel conduction, enabling unsaturated, intensity‐resolved ...
Jiayi Xu, Ming Lei, Yuanzhe Liang, Biao Qi, Ziyi Dai, Yong Zhao, Bingpu Zhou   +6 more
wiley   +1 more source

Interstitial Ag⁺ Engineering Enables Superior Resistive Switching in Quasi-2D Halide Perovskites. [PDF]

Nanomaterials (Basel)
Qin H, Wang Z, Li Q, Lin J, Lu D, Huang Y, Gao W, Wang H, Bi C.   +8 more
europepmc   +1 more source

Indirect Band Edge and Chain‐Locked Linear Dichroism in the Quasi‐1D Van der Waals Antiferromagnet AgCrP2S6

Advanced Functional Materials, EarlyView.
AgCrP2S6 reveals a momentum‐indirect band edge (≈1.35 eV) and chain‐locked linear dichroism: the first direct transitions emerge at 1.6–1.8 eV for E||a. Resonant Raman and photoemission corroborate this assignment. In ACPS/graphene heterostructures, photocurrent turns on above ≈1.5 eV and follows the same polarization selection rules (anisotropy ≈0.53),
Oleksandr Volochanskyi, Sabrina Juergensen, Václav Valeš, Kumari Surbhi, Martin Mergl, Kseniia Mosina, Zdeněk Sofer, Jan Honolka, Patryk Kusch, Martin Kalbáč   +9 more
wiley   +1 more source

Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors. [PDF]

ACS Appl Electron Mater
Antola A, Laaksonen J, Huhtinen H, Angervo I, Granroth S, Schulman A, Laukkanen P, Paturi P.   +7 more
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Coupling Light into Memristors: Advances in Halide Perovskite Resistive Switching and Neuromorphic Computing. [PDF]

Small Methods
Feng Z, Wang J, Chen F, Dong B, Ma X, Mei T, Yang N, Guan X, Hu L, Lin CH, Li Z, Wu T, Chu D.   +12 more
europepmc   +1 more source