Results 261 to 270 of about 1,933,006 (329)

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

Advanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa, Masaki Tsuji, Yoshihiro Furue, Yifan Geng, Satya P. Pati, Satoshi Hamasuna, Takeaki Yajima   +6 more
wiley   +1 more source

Transparent Zinc Oxide Memristor Structures: Magnetron Sputtering of Thin Films, Resistive Switching Investigation, and Crossbar Array Fabrication. [PDF]

Nanomaterials (Basel)
Saenko AV, Tominov RV, Jityaev IL, Vakulov ZE, Avilov VI, Polupanov NV, Smirnov VA.   +6 more
europepmc   +1 more source

Deterministic hBN Bubbles as a Versatile Platform for Studies on Single‐Photon Emitters

Advanced Functional Materials, EarlyView.
Single‐photon emitters (SPEs) in hBN are promising for quantum technologies; however, in exfoliated samples their activation is required, limiting reproducibility of previous studies. This work introduces a large‐area MOVPE‐grown hBN platform that hosts SPEs without prior activation.
Piotr Tatarczak, Tomasz Fąs, Jan Pawłowski, Aleksandra Krystyna Dąbrowska, Jan Suffczyński, Mateusz Tokarczyk, Piotr Wróbel, Andrzej Wysmołek, Johannes Binder   +8 more
wiley   +1 more source

Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO₃ Devices. [PDF]

ACS Appl Mater Interfaces
Álvarez-Martínez V, Ramos R, Leborán V, Sarantopoulos A, Dittmann R, Rivadulla F.   +5 more
europepmc   +1 more source

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

Advanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante, Valeria Demontis, Jonas Riisnaes Karl, Lam Hoi Tung, Sebastiano De Stefano, Daniela Marongiu, Adolfo Mazzotti, Aditya Bhardwaj, Francesco Mattana, Elisa Pili, Selene Matta, Federico Paolucci, Michele Saba, Andrea Mura, Giovanni Bongiovanni, Monica F Craciun, Saverio Russo, Antonio Di Bartolomeo   +17 more
wiley   +1 more source

Memristive tonotopic mapping with volatile resistive switching memory devices. [PDF]

Nat Commun
Milozzi A, Ricci S, Ielmini D.
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Capacitive and Inductive Characteristics of Volatile Perovskite Resistive Switching Devices with Analog Memory. [PDF]

J Phys Chem Lett
Gonzales C, Bou A, Guerrero A, Bisquert J.   +3 more
europepmc   +1 more source

Nanoscale Titanium Oxide Memristive Structures for Neuromorphic Applications: Atomic Force Anodization Techniques, Modeling, Chemical Composition, and Resistive Switching Properties. [PDF]

Nanomaterials (Basel)
Avilov VI, Tominov RV, Vakulov ZE, Rodriguez DJ, Polupanov NV, Smirnov VA.   +5 more
europepmc   +1 more source

Interfacial Resistive Switching of Niobium-Titanium Anodic Memristors with Self-Rectifying Capabilities. [PDF]

Nanomaterials (Basel)
Knapic D, Minenkov A, Atanasova E, Zrinski I, Hassel AW, Mardare AI.   +5 more
europepmc   +1 more source