Results 31 to 40 of about 1,933,006 (329)

Characterization and modeling of resistive switching phenomena in IGZO devices

AIP Advances, 2022
This study explores the resistive switching phenomena present in 4 µm2 amorphous Indium–Gallium–Zinc Oxide (IGZO) memristors. Despite being extensively reported in the literature, not many studies detail the mechanisms that dominate conduction on the ...
G. Carvalho, M. E. Pereira, C. Silva, J. Deuermeier, A. Kiazadeh, V. Tavares   +5 more
doaj   +1 more source

First evidence of resistive switching in polycrystalline GaV4S8 thin layers [PDF]

, 2011
Recently a new type of reversible and non-volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se).
Beck, Besland, Besland, Cario, Chapert, Dubost, Elissalde, Goux, Huai, Huai, Kim, Liu, Mangin, Modera, Nishimura, Stadelmann, Szot, Vaju, Vaju, Waser   +19 more
core   +3 more sources

Enhanced resistive switching performance in bilayer Pt/TiO2/Co3O4/Pt memory device

Materials Research Express, 2021
In this work, the bilayer Pt/TiO _2 /Co _3 O _4 /Pt and single-layer Pt/TiO _2 /Pt memory devices were fabricated for investigating their resistive switching characteristics.
Lilan Zou, Jianmei Shao, Dinghua Bao
doaj   +1 more source

Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights

IEEE Journal of the Electron Devices Society, 2021
A Ferroelectric, two-terminals, analog memristive device is fabricated with a Back-End-Of-Line, CMOS compatible process. A bilayer composed of a ferroelectric material, HfZrO4 (HZO) and a semiconducting oxide, WOx layer is comprised between two TiN ...
L. Begon-Lours, M. Halter, Y. Popoff, Z. Yu, D. F. Falcone, D. Davila, V. Bragaglia, A. La Porta, D. Jubin, J. Fompeyrine, B. J. Offrein   +10 more
doaj   +1 more source

Spectroscopic indications of tunnel barrier charging as the switching mechanism in memristive devices [PDF]

, 2017
Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory.
Asamitsu, Asanuma, Baikalov, Beck, Bertaud, Borgatti, Borgatti, Chen, Chen, Chevallier, Dirkmann, Dudy, Fabris, Fairley, Fors, French, Fujii, Garvie, Govoreanu, Govoreanu, Gundlach, Hansen, Hasan, Herpers, Herrero-Martin, Hu, Hunt, Ifland, Ignatiev, Jablonski, Jeon, Jeong, Kawano, Kobayashi, Kohlstedt, Kroeger, Lee, Lenser, Luis Garcia-Munoz, Marot, McComb, Meyer, Muenstermann, Nian, Oka, Oshima, Ostanin, Ostanin, Park, Parreira, Pomfret, Quintero, Richter, Rozenberg, Sacchi, Santander-Syro, Sawa, Sawa, Schramm, Scott, Seong, Shono, Sim, Simmons, Slooten, Sowinska, Truccato, Walsh, Waser, Watanabe, Watanabe, Xue   +71 more
core   +1 more source

Resistive Switching‐based Electro‐Optical Modulation [PDF]

Advanced Optical Materials, 2014
[No abstract available]
Battal, E., Ozcan, A., Okyay, A., K.
openaire   +4 more sources

CuO/ZnO memristors via oxygen or metal migration controlled by electrodes

AIP Advances, 2016
We carry out a comparative study on resistive switching in CuO/ZnO bilayer films; both samples grown Pt and Ag electrodes show bipolar switching behaviors.
Yong Huang, Zihan Shen, Ye Wu, Meiqiu Xie, Yanqiang Hu, Shufang Zhang, Xiaoqin Shi, Haibo Zeng   +7 more
doaj   +1 more source

Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory [PDF]

, 2019
A detailed understanding of quantization conductance (QC), their correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements.
Deswal, Sweety, Kumar, Ajeet, Kumar, Ashok, Malode, Rupali R.   +3 more
core   +2 more sources

Operando characterization of conductive filaments during resistive switching in Mott VO2

Proceedings of the National Academy of Sciences of the United States of America, 2021
Significance To perform hardware-based neuromorphic computing, novel materials exhibiting a wide variety of electronic properties are currently being explored.
Shaobo Cheng, Min-Han Lee, Xing Li, L. Fratino, Federico Tesler, Myung‐Geun Han, Javier del Valle, R. Dynes, M. Rozenberg, I. Schuller, Yimei Zhu   +10 more
semanticscholar   +1 more source

Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

Results in Physics, 2019
With the memory device is required to be widely used in more complex environment, the exploration of new memory device have become a focus of research. Herein, a resistive switching memory device based on BiFeO3(BFO)/Cu2ZnSnSe4(CZTSe) heterostructure is ...
Xiaoxia Li, Bai Sun, Wentao Hou, Jiao Chen, Pingping Zheng, Shuangsuo Mao, Shouhui Zhu, Yudong Xia, Guoqiang Fu   +8 more
doaj   +1 more source