Results 41 to 50 of about 1,933,006 (329)
Resistive damping implementation as a method to improve controllability in stiff ohmic RF-MEMS switches [PDF]
, 2013 This paper presents in detail the entire procedure of calculating the bias resistance of an ohmic RF-MEMS switch, controlled under resistive damping (charge drive technique).
D Czaplewski +11 more
core +1 more source
Insight into physics-based RRAM models – review
The Journal of Engineering, 2019 This article presents a review of physical, analytical, and compact models for oxide-based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that ...
Arya Lekshmi Jagath +3 more
doaj +1 more source
Physical Review X, 2022 Resistive switching is of the key phenomena for applications such as nonvolatile memories or neuromorphic computing. V_{3}O_{5}, a compound of the vanadium oxide Magnéli series, is one of the rare materials to exhibit an insulator-metal transition above ...
Coline Adda +10 more
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Tuning the resistive switching properties of TiO2-x films [PDF]
, 2015 We study the electrical characteristics of TiO2-x-based resistive switching devices fabricated with different oxygen/argon flow ratio during the oxide thin film sputtering deposition. Upon minute changes in this fabrication parameter, three qualitatively
Ghenzi, Néstor +5 more
core +2 more sources
Shock-waves and commutation speed of memristors [PDF]
, 2016 Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 10 nm. The resistive switching behaviour of transition metal oxides and the associated memristor device is emerging as a ...
Dobrosavljević, V. +5 more
core +3 more sources
Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
AIP Advances, 2018 Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories ...
J. Fan +5 more
doaj +1 more source
Materials Research Express, 2020 Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization ...
Muhammad Ismail +6 more
doaj +1 more source
High speed chalcogenide glass electrochemical metallization cells with various active metals [PDF]
, 2018 We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al).
A Baset Gholizadeh +12 more
core +2 more sources
Anomalous resistive switching phenomenon [PDF]
Journal of Applied Physics, 2012 Resistive switching was observed in Pt/SrTiO3/Pt capacitor devices. The switching depends on both the amplitude and polarity of the applied voltage and cannot be described as either bipolar or unipolar resistive switching. We term this behavior antipolar due to the opposite polarity of the set voltage relative to the previous reset voltage.
Mojarad SA +6 more
openaire +2 more sources
Scientific Reports, 2021 Resistive switching is an important phenomenon for future memory devices such as resistance random access memories or neuronal networks. While there are different types of resistive switching, such as filament or interface switching, this work focuses on
Christiane Ader +2 more
doaj +1 more source