Results 41 to 50 of about 84,204 (350)

Resistive Switching in Graphene Oxide

Frontiers in Materials, 2020
The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics.
Francisco J. Romero, Alejando Toral, Alberto Medina-Rull, Carmen Lucia Moraila-Martinez, Diego P. Morales, Akiko Ohata, Andres Godoy, Francisco G. Ruiz, Noel Rodriguez   +8 more
doaj   +1 more source

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

, 2009
We have proposed a kind of nonvolatile resistive switching memory based on amorphous LaLuO3, which has already been established as a promising candidate of high-k gate dielectric employed in transistors.
Gao, Xu, Guo, Hongxuan, Guo, Kang, Li, Kui, Liu, Zhiguo, Xia, Yidong, Xu, Bo, Yin, Jiang   +7 more
core   +1 more source

High speed chalcogenide glass electrochemical metallization cells with various active metals [PDF]

, 2018
We fabricated electrochemical metallization (ECM) cells using a GaLaSO solid electrolyte, a InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al).
A Baset Gholizadeh, Alexander Burgess, Brady D J, Christopher Craig, Daniel W Hewak, Hewak D W ed Murugan G S, Kozicki M N, Lu D, Lübben M, Mark A Hughes, Prakash S, Seshan K, Steven Hinder   +12 more
core   +2 more sources

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Advances in Condensed Matter Physics, 2015
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Lifeng Liu, Yi Hou, Weibing Zhang, Dedong Han, Yi Wang   +4 more
doaj   +1 more source

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

Micromachines, 2020
In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method.
Xiaofeng Zhao, Ping Song, Huiling Gai, Yi Li, Chunpeng Ai, Dianzhong Wen   +5 more
doaj   +1 more source

Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

Advanced Electronic Materials, 2023
In Mott‐type resistive switching phenomena, which are based on the metal–insulator transition in strongly correlated materials, the presence of an abrupt temperature‐driven transition in the material is considered essential for achieving high‐speed and ...
Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi   +5 more
doaj   +1 more source

Resistive damping implementation as a method to improve controllability in stiff ohmic RF-MEMS switches [PDF]

, 2013
This paper presents in detail the entire procedure of calculating the bias resistance of an ohmic RF-MEMS switch, controlled under resistive damping (charge drive technique).
D Czaplewski, H Newman, J Blecke, K-S Ou, L Castaner, L Castaner, M Spasos, M Varehest, M. Spasos, R Nadal-Guardia, R. Nilavalan, ZJ Guo   +11 more
core   +1 more source

Resistive switching in nanogap systems on SiO2 substrates

, 2009
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further
Chen, Collins, Collins, Dearnaley, Dearnaley, Dearnaley, Deshpande, Endo, Gould, Hirose, Jin, Kim, Kim, Li, Meister, Naitoh, Ouyang, Satoh, Scott, Shatzkes, Simmons, Sinitskii, Standley, Szot, Thurstans, Waser, Weitz, Wokaun, Yang, Yao   +29 more
core   +1 more source

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices [PDF]

, 2014
Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated.
Bard A. J., C. H. de Groot, L. Jiang, L. Zhong, R. Huang, Sze S. M.   +5 more
core   +1 more source

Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses

, 2013
Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core   +1 more source