Results 61 to 70 of about 1,933,006 (329)

Highly Scalable Neuromorphic Hardware with 1-bit Stochastic nano-Synapses

open access: yes, 2013
Thermodynamic-driven filament formation in redox-based resistive memory and the impact of thermal fluctuations on switching probability of emerging magnetic switches are probabilistic phenomena in nature, and thus, processes of binary switching in these ...
Kavehei, Omid, Skafidas, Efstratios
core   +1 more source

Forming-free bipolar and unipolar resistive switching behaviors with low operating voltage in Ag/Ti/CeO2/Pt devices

open access: yesResults in Physics, 2020
Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room ...
Wenqing Wang, Baolin Zhang, Hongbin Zhao
doaj   +1 more source

Resistive switching in nanogap systems on SiO2 substrates

open access: yes, 2009
Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further
Chen   +29 more
core   +1 more source

Organoids in pediatric cancer research

open access: yesFEBS Letters, EarlyView.
Organoid technology has revolutionized cancer research, yet its application in pediatric oncology remains limited. Recent advances have enabled the development of pediatric tumor organoids, offering new insights into disease biology, treatment response, and interactions with the tumor microenvironment.
Carla Ríos Arceo, Jarno Drost
wiley   +1 more source

Morphology control of volatile resistive switching in La0.67Sr0.33MnO3 thin films on LaAlO3 (001)

open access: yesFrontiers in Nanotechnology, 2023
The development of in-memory computing hardware components based on different types of resistive materials is an active research area. These materials usually exhibit analog memory states originating from a wide range of physical mechanisms and offer ...
A. Jaman   +7 more
doaj   +1 more source

Advanced physical modeling of SiOx resistive random access memories [PDF]

open access: yes, 2016
We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (
Asenov, Asen   +8 more
core   +1 more source

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

open access: yesNPG Asia Materials, 2020
Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years.
Hyojung Kim   +7 more
semanticscholar   +1 more source

Reciprocal control of viral infection and phosphoinositide dynamics

open access: yesFEBS Letters, EarlyView.
Phosphoinositides, although scarce, regulate key cellular processes, including membrane dynamics and signaling. Viruses exploit these lipids to support their entry, replication, assembly, and egress. The central role of phosphoinositides in infection highlights phosphoinositide metabolism as a promising antiviral target.
Marie Déborah Bancilhon, Bruno Mesmin
wiley   +1 more source

Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin films

open access: yesAIP Advances, 2015
Resistive switching oxides are investigated at great length as promising candidates for the next generation of non-volatile memories. It is generally assumed that defects have a strong impact on the resistive switching properties of transition metal ...
N. Raab, C. Bäumer, R. Dittmann
doaj   +1 more source

Investigating Unipolar Switching in Niobium Oxide Resistive Switches: Correlating Quantized Conductance and Mechanism [PDF]

open access: yes, 2018
Memory devices based on resistive switching (RS) have not been fully realised due to lack of understanding of the underlying switching mechanisms. Nature of ion transport responsible for switching and growth of conducting filament in transition metal ...
Deswal, Sweety   +2 more
core   +2 more sources

Home - About - Disclaimer - Privacy