Results 301 to 310 of about 123,696 (336)

Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO

Journal of the American Chemical Society, 2011
Electrically driven resistance change phenomenon in metal/NiO/metal junctions, so-called resistive switching (RS), is a candidate for next-generation universal nonvolatile memories. However, the knowledge as to RS mechanisms is unfortunately far from comprehensive, especially the spatial switching location, which is crucial information to design ...
Keisuke, Oka, Takeshi, Yanagida, Kazuki, Nagashima, Masaki, Kanai, Tomoji, Kawai, Jin-Soo, Kim, Bae Ho, Park   +6 more
openaire   +2 more sources

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Advanced Electronic Materials, 2019
The NAND flash memory serves as the key enabler of the flourishing of portable handheld information devices, such as the cellular phone. The recent upsurge in the sales of vertical NAND flash memory (V‐NAND) entails a further increase in the available ...
K. J. Yoon, Yumin Kim, C. Hwang
semanticscholar   +1 more source

Resistive-Switching Memories

2022
Peng Huang, Yudi Zhao, Jinfeng Kang
openaire   +1 more source

Overview of resistive switching memory (RRAM) switching mechanism and device modeling

2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014
In this paper, the recent progress on the understandings of the switching mechanisms in oxide resistive switching memory (RRAM) is reviewed. Several representative device modeling approaches including numerical discretized models, numerical continuous models and analytical compact models are discussed using HfO x bipolar RRAM as a model system.
openaire   +1 more source

Schottky-Barrier Resistive Memory with Highly Uniform Switching

Journal of Nanoscience and Nanotechnology, 2014
Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-microW power and highly uniform current distributions (on-off ratio > 1000x) are realized. The Schottky barrier at Ni/GeO(x) interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach
openaire   +2 more sources

Analogue In-Memory Computing with Resistive Switching Memories

2022
Pedretti, Giacomo, Ielmini, Daniele
openaire   +2 more sources

Resistive switching memories

2020
Stefano Brivio, Stephan Menzel
openaire   +1 more source

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.

Nature Nanotechnology, 2010
D. Kwon, K. Kim, Jae Hyuck Jang, J. Jeon, Min Hwan Lee, G. Kim, Xiang-Shu Li, G. Park, Bora Lee, Seungwu Han, Miyoung Kim, C. Hwang   +11 more
semanticscholar   +1 more source

Reset–Set Instability in Unipolar Resistive-Switching Memory

IEEE Electron Device Letters, 2010
Unipolar resistive-switching memory attracts a strong interest as high-density nonvolatile memory for future technology nodes. The high-to-low-resistance change is achieved by the set operation, whereas the reverse transition is obtained by the reset process.
openaire   +2 more sources

Stretchable resistive switching memory devices for wearable systems

Journal of the Korean Ceramic Society
Hyojung Kim, I. Im, Daijoon Hyun, Muhammad Hilal, Zhicheng Cai, Seok Joo Yang, Young-Seok Shim, Cheon Woo Moon   +7 more
semanticscholar   +1 more source