Results 281 to 290 of about 123,696 (336)

Physics of the Switching Kinetics in Resistive Memories

Advanced Functional Materials, 2015
Memristive cells based on different physical effects, that is, phase change, valence change, and electrochemical processes, are discussed with respect to their potential to overcome the voltage–time dilemma that is crucial for an application in storage devices.
Stephan Menzel, Ulrich Böttger, Martin Wimmer, Martin Salinga   +3 more
openaire   +1 more source

Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots

Applied Physics Letters, 2019
All-inorganic perovskite quantum dots (APQDs) have emerged as excellent materials which have been widely used in numerous micro-nano photoelectric devices. However, resistive random access memory (RRAM) devices based on APQDs are relatively scarce.
Zhiliang Chen, Yating Zhang, Yu Yu, Mingxuan Cao, Yongli Che, Lufan Jin, Yifan Li, Qingyan Li, Tengteng Li, H. Dai, Junbo Yang, Jianquan Yao   +11 more
semanticscholar   +1 more source

Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices.

Carbohydrate Polymers, 2019
Nowadays the development of natural biomaterials as promising building polymers for flexible, biodegradable, biocompatible and environmentally friendly electronic devices is of great interest.
Tao Liu, Wei Wu, K. Liao, Qijun Sun, Xianjing Gong, V. Roy, Zhongzhen Yu, R. K. Li   +7 more
semanticscholar   +1 more source

Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory

Advanced Materials, 2013
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10(6) have been obtained and a multilevel memory based on sericin has been achieved.
Wang, Hong, Meng, Fanben, Cai, Yurong, Zheng, Liyan, Li, Yuangang, Liu, Yuanjun, Jiang, Yueyue, Wang, Xiaotian, Chen, Xiaodong   +8 more
openaire   +3 more sources

Resistance switching memory in perovskite oxides

Annals of Physics, 2015
Abstract The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons ...
Z.B. Yan, J.-M. Liu
openaire   +1 more source

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices

ACS Applied Electronic Materials, 2019
A resistive switching random access memory (RRAM) has occupied great scientific and industrial interest for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing ...
Mayameen S. Kadhim, Feng Yang, B. Sun, W. Hou, Haixia Peng, Yunming Hou, Yongfang Jia, Ling Yuan, Yanmei Yu, Yong Zhao   +9 more
semanticscholar   +1 more source

Human hair keratin for physically transient resistive switching memory devices

Journal of Materials Chemistry C, 2019
A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.
Qiqi Lin, Shilei Hao, Wei Hu, Ming Wang, Zhigang Zang, Linna Zhu, Juan Du, Xiaosheng Tang   +7 more
semanticscholar   +1 more source

Metal halide perovskites for resistive switching memory devices and artificial synapses

Journal of Materials Chemistry C, 2019
This article highlights recent developments of emerging metal halide perovskite based resistive switching memory devices and artificial synapses.
Bixin Li, W. Hui, Xueqin Ran, Yingdong Xia, Fei Xia, Lingfeng Chao, Yonghua Chen, Wei Huang   +7 more
semanticscholar   +1 more source

Electrical Characterization of Resistive Switching Memories

AIP Conference Proceedings, 2011
Resistive switching memory (also known as RRAM for resistive random access memory) is considered a promising candidate for the next‐generation nonvolatile memories. This paper summarizes the electrical characterization methodologies for RRAM performance evaluation and the investigation of resistive switching mechanisms.
An Chen, Ming-Ren Lin, David G. Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M. Secula   +6 more
openaire   +1 more source

Resistive switching memory using biomaterials

Journal of Electroceramics, 2017
Resistive switching memory (ReRAM) is emerging as a developed technology for a new generation of non-volatile memory devices. Natural organic biomaterials are potential elements of environmentally-benign, biocompatible, and biodegradable electronic devices for information storage and resorbable medical implants.
Niloufar Raeis-Hosseini, Jang-Sik Lee
openaire   +2 more sources