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Capacitive effect: An original of the resistive switching memory
, 2020Interplay between ions and electrons endows memristor with promising applications from the high density storages, memory logic gates to neuromorphic chips.
Guangdong Zhou +8 more
semanticscholar +1 more source
Resistive Switching Memory Devices Based on Proteins
Advanced Materials, 2015Resistive switching memory constitutes a prospective candidate for next‐generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices.
Wang, Hong +5 more
openaire +3 more sources
ACS Applied Materials and Interfaces, 2020
The rapid growing demand of fast information storage and processing has driven the development of resistive random access memories (RRAMs). Recently, the RRAMs based on organometal halide perovskite materials have reported promising memory properties ...
Fei Xia +8 more
semanticscholar +1 more source
The rapid growing demand of fast information storage and processing has driven the development of resistive random access memories (RRAMs). Recently, the RRAMs based on organometal halide perovskite materials have reported promising memory properties ...
Fei Xia +8 more
semanticscholar +1 more source
Resistive Switches and Memories from Silicon Oxide
Nano Letters, 2010Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments ...
Jun, Yao +4 more
openaire +2 more sources
Complementary resistive switches for passive nanocrossbar memories
Nature Materials, 2010On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits.
Eike, Linn +3 more
openaire +2 more sources
Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
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In-place Repair for Resistive Memories Utilizing Complementary Resistive Switches
Proceedings of the 2016 International Symposium on Low Power Electronics and Design, 2016Recent advances in resistive memory technologies have demonstrated their potential to serve as next generation random access memories (RAM) which are fast, low-power, ultra-dense, and nonvolatile. However, owing to their stochastic filamentary nature, several sources of hard errors exist that could affect the lifetime of a resistive RAM (ReRAM).In this
Amirali Ghofrani +3 more
openaire +1 more source
Advances in Materials, 2019
Resistive switching (RS) memory has stayed at the forefront of next‐generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating ...
Junjiang Tian +12 more
semanticscholar +1 more source
Resistive switching (RS) memory has stayed at the forefront of next‐generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating ...
Junjiang Tian +12 more
semanticscholar +1 more source
Advanced Electronic Materials, 2019
Flexible memory is highly desirable for data storage in portable wearable electronics. Here, a flexible bilayer TiO2/HfO2‐architecture‐based resistive random access memory (RRAM) is fabricated a on polyethylene naphthalate (PEN) substrate, and exhibits ...
Rulin Zhang +7 more
semanticscholar +1 more source
Flexible memory is highly desirable for data storage in portable wearable electronics. Here, a flexible bilayer TiO2/HfO2‐architecture‐based resistive random access memory (RRAM) is fabricated a on polyethylene naphthalate (PEN) substrate, and exhibits ...
Rulin Zhang +7 more
semanticscholar +1 more source
Recent progress in physically transient resistive switching memory
, 2020With the aim to address the physical limits of recent non-volatile flash memory, resistive switching memory has been intensively investigated as a strong competitor of the next generation memory technology.
Wei Hu, Ben Yang, Yanming Zhang, Yin She
semanticscholar +1 more source