Results 271 to 280 of about 8,899 (300)

Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO

Journal of the American Chemical Society, 2011
Electrically driven resistance change phenomenon in metal/NiO/metal junctions, so-called resistive switching (RS), is a candidate for next-generation universal nonvolatile memories. However, the knowledge as to RS mechanisms is unfortunately far from comprehensive, especially the spatial switching location, which is crucial information to design ...
Keisuke, Oka, Takeshi, Yanagida, Kazuki, Nagashima, Masaki, Kanai, Tomoji, Kawai, Jin-Soo, Kim, Bae Ho, Park   +6 more
openaire   +2 more sources

Metal Oxide Resistive Switching Memory

2011
Electrically triggered resistance switching phenomenon in metal oxide was extensively explored for the promising potential as an emerging nonvolatile memory. Prototype chips of large-scale array based on metal oxide memory are currently under development in industry.
Shimeng Yu, Byoungil Lee, H.-S. Philip Wong   +2 more
openaire   +1 more source

An electrically modifiable synapse array of resistive switching memory

Nanotechnology, 2009
This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio ...
Hyejung, Choi, Heesoo, Jung, Joonmyoung, Lee, Jaesik, Yoon, Jubong, Park, Dong-jun, Seong, Wootae, Lee, Musarrat, Hasan, Gun-Young, Jung, Hyunsang, Hwang   +9 more
openaire   +2 more sources

Resistive-Switching Memories

2022
Peng Huang, Yudi Zhao, Jinfeng Kang
openaire   +1 more source

Overview of resistive switching memory (RRAM) switching mechanism and device modeling

2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014
In this paper, the recent progress on the understandings of the switching mechanisms in oxide resistive switching memory (RRAM) is reviewed. Several representative device modeling approaches including numerical discretized models, numerical continuous models and analytical compact models are discussed using HfO x bipolar RRAM as a model system.
openaire   +1 more source

Schottky-Barrier Resistive Memory with Highly Uniform Switching

Journal of Nanoscience and Nanotechnology, 2014
Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-microW power and highly uniform current distributions (on-off ratio > 1000x) are realized. The Schottky barrier at Ni/GeO(x) interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach
openaire   +2 more sources

Analogue In-Memory Computing with Resistive Switching Memories

2022
Pedretti, Giacomo, Ielmini, Daniele
openaire   +2 more sources

Resistive switching memories

2020
Stefano Brivio, Stephan Menzel
openaire   +1 more source

Reset–Set Instability in Unipolar Resistive-Switching Memory

IEEE Electron Device Letters, 2010
Unipolar resistive-switching memory attracts a strong interest as high-density nonvolatile memory for future technology nodes. The high-to-low-resistance change is achieved by the set operation, whereas the reverse transition is obtained by the reset process.
openaire   +2 more sources

Reliability of analog resistive switching memory for neuromorphic computing

Applied Physics Reviews, 2020
Meiran Zhao, Bin Gao, Jianshi Tang
exaly