Results 251 to 260 of about 8,899 (300)
A Rapid-prototyping CMOS-RRAM Integration Strategy. [PDF]
Microsyst NanoengTsiamis A +2 more
europepmc +1 more source
Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices. [PDF]
Micromachines (Basel)Chen KH +5 more
europepmc +1 more source
Resistive Switching Memory Devices Based on Proteins
Advanced Materials, 2015 Resistive switching memory constitutes a prospective candidate for next‐generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices.
Wang, Hong +5 more
openaire +4 more sources
Halide Perovskites for Resistive Switching Memory
The Journal of Physical Chemistry Letters, 2021 Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture.
Kaijin Kang, Wei Hu, Xiaosheng Tang
openaire +3 more sources
Resistive switching memory using biomaterials
Journal of Electroceramics, 2017 Resistive switching memory (ReRAM) is emerging as a developed technology for a new generation of non-volatile memory devices. Natural organic biomaterials are potential elements of environmentally-benign, biocompatible, and biodegradable electronic devices for information storage and resorbable medical implants.
Niloufar Raeis-Hosseini, Jang-Sik Lee
openaire +3 more sources
Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey
Electronics (Switzerland), 2015 Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e ...
Ee Wah Lim +2 more
exaly +2 more sources
Some of the next articles are maybe not open access.
Related searches:
Related searches:
In-memory Learning with Analog Resistive Switching Memory: A Review and Perspective
Proceedings of the IEEE, 2021In this article, we review the existing analog resistive switching memory (RSM) devices and their hardware technologies for in-memory learning, as well as their challenges and prospects. Since the characteristics of the devices are different for in-memory learning and digital memory applications, it is important to have an in-depth understanding across
Yue Xi +8 more
openaire +1 more source
Nanoionics-based resistive switching memories
Nature Materials, 2007Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable.
Rainer, Waser, Masakazu, Aono
openaire +2 more sources
Electrochemically prepared oxides for resistive switching memories
Faraday Discussions, 2019Electrochemically grown anodic oxides of different compositions and properties were tested as solid electrolytes for resistive switching memories.
A. Zaffora +4 more
openaire +4 more sources
Resistive Switches and Memories from Silicon Oxide
Nano Letters, 2010Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments ...
Jun, Yao +4 more
openaire +2 more sources