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Complementary resistive switches for passive nanocrossbar memories
Nature Materials, 2010On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits.
Eike, Linn +3 more
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Redox-Based Resistive Switching Memories
Journal of Nanoscience and Nanotechnology, 2012This review covers resistive random access memories which utilize redox processes and ionic motion on the nanoscale as their storage principle (ReRAM). Generic aspects are described in order to provide the physics and chemistry background for the explanation of the microscopic switching mechanism and of the high nonlinearity in the switching kinetics ...
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In-place Repair for Resistive Memories Utilizing Complementary Resistive Switches
Proceedings of the 2016 International Symposium on Low Power Electronics and Design, 2016Recent advances in resistive memory technologies have demonstrated their potential to serve as next generation random access memories (RAM) which are fast, low-power, ultra-dense, and nonvolatile. However, owing to their stochastic filamentary nature, several sources of hard errors exist that could affect the lifetime of a resistive RAM (ReRAM).In this
Amirali Ghofrani +3 more
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Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory
Advanced Materials, 2013Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10(6) have been obtained and a multilevel memory based on sericin has been achieved.
Wang, Hong +8 more
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Physics of the Switching Kinetics in Resistive Memories
Advanced Functional Materials, 2015Memristive cells based on different physical effects, that is, phase change, valence change, and electrochemical processes, are discussed with respect to their potential to overcome the voltage–time dilemma that is crucial for an application in storage devices.
Stephan Menzel +3 more
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Resistance switching memory in perovskite oxides
Annals of Physics, 2015Abstract The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons ...
Z.B. Yan, J.-M. Liu
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Electrical Characterization of Resistive Switching Memories
AIP Conference Proceedings, 2011Resistive switching memory (also known as RRAM for resistive random access memory) is considered a promising candidate for the next‐generation nonvolatile memories. This paper summarizes the electrical characterization methodologies for RRAM performance evaluation and the investigation of resistive switching mechanisms.
An Chen +6 more
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Memory array with complementary resistive switch with memristive characteristics
2015 International Conference on Advances in Computing, Communications and Informatics (ICACCI), 2015Emerging solid state memory devices based on different materials and volatility has been widely acknowledged like NVRAMs (or Memristor). Evolution of new solid state ionic conductors and in particular (Memristor) brought impetus to the creation of new domain of larger storage capabilities for the future electronic systems.
Sneha Mohan Patil, S. R. S. Prabhaharan
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Phase-Change and Redox-Based Resistive Switching Memories
Proceedings of the IEEE, 2015This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory.
Dirk J. Wouters +2 more
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Resistive switching in organic memory devices for flexible applications
2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014The organic resistance memories show great potentials for future flexible applications. In this paper the main challenges and typical recent progress of the organic resistance memory devices are discussed. A kind of single-component polymer resistance memory device based on polychloro-paraxylylene (parylene-C) is focused, with excellent chemical ...
Ru Huang 0001 +5 more
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