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Mechanosynthesis of Layered Double Perovskites with Aromatic Spacer Cations for Lead-Free Thin-Film Opto(electro)ionics. [PDF]

Chemphyschem
Ghasemi M, Bravetti G, Loizos M, Tountas M, AlSabeh G, Kumar M, Kymakis E, Rogdakis K, Golobostanfard MR, Milić JV.   +9 more
europepmc   +1 more source

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Halide Perovskites for Resistive Switching Memory.

The Journal of Physical Chemistry Letters, 2021
Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von ...
Kaijin Kang, Wei Hu, Xiaosheng Tang
semanticscholar   +3 more sources

In-memory Learning with Analog Resistive Switching Memory: A Review and Perspective

Proceedings of the IEEE, 2021
In this article, we review the existing analog resistive switching memory (RSM) devices and their hardware technologies for in-memory learning, as well as their challenges and prospects.
Yue Xi, B. Gao, Jianshi Tang, An Chen, Meng-Fan Chang, X. Hu, J. Spiegel, He Qian, Huaqiang Wu   +8 more
semanticscholar   +2 more sources

Intramolecular Hydrogen Bonding Interactions Induced Enhancement in Resistive Switching Memory Performance for Covalent Organic Framework‐Based Memristors

Advanced Functional Materials, 2023
Covalent organic frameworks (COFs) are promising active mediums for high‐performance data storage devices stemming from their high crystallinity, ordered porous channels, predetermined topology, and rigid architectures, while relative studies are still ...
Hongling Yu, Panke Zhou, Xiong Chen
semanticscholar   +1 more source

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Advanced Functional Materials, 2022
Perovskite resistive random‐access memory (RRAM) is a promising candidate for next‐generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low‐cost fabrication, and good photoelectric regulation performance.
Xiaomin Liu, S. Ren, Zhenhua Li, Jiajun Guo, Shenghui Yi, Zheng Yang, Weizhong Hao, Rui Li, Jin-jin Zhao   +8 more
semanticscholar   +1 more source

High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

, 2021
With the advent of the big-data era, conventional memory technologies and devices are facing enormous challenges. Resistive random access memory (RRAM) is an emerging memory technology that has aroused widespread interest for its immense potential ...
Xin-Xin Yu, K. Chang, Anhua Dong, Z. Gan, K. Jiang, Yi-Xuan Ling, Yiru Niu, Diyuan Zheng, Xinyuan Dong, Renzhi Wang, Yizhen Li, Zhuyikang Zhao, P. Bao, Binbin Liu, Yuhong Cao, Suqin Hu, Hui Wang   +16 more
semanticscholar   +1 more source

Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory

Advanced Functional Materials, 2020
Although there have been attempts to use non‐lead based halide perovskite materials as insulating layers for resistive switching memory, the ratio of low resistance state (LRS) to high resistance state (HRS) ( = ON/OFF ratio) and/or endurance is reported
So-Yeon Kim, June-Mo Yang, Eun-Suk Choi, N. Park   +3 more
semanticscholar   +1 more source

Annealed AlOx film with enhanced performance for bipolar resistive switching memory

, 2021
Although some efforts have been dedicated to explore aluminum oxide (AlOx) based memory devices in the past few years, the disappointed stability and complicated fabrication process strictly limit its wide applications.
Wang Ziyi, Bo Sun, Haibo Ye, Zhiyong Liu, G. Liao, T. Shi   +5 more
semanticscholar   +1 more source

Nanoionics-based resistive switching memories

Nature Materials, 2007
Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable.
Rainer, Waser, Masakazu, Aono
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Electrochemically prepared oxides for resistive switching memories

Faraday Discussions, 2019
Electrochemically grown anodic oxides of different compositions and properties were tested as solid electrolytes for resistive switching memories.
A. Zaffora, F. Di Quarto, H. Habazaki, I. Valov, M. Santamaria   +4 more
openaire   +4 more sources