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Binary Metal Oxide-based Resistive Switching Memory Devices: A Status Review
Materials Today Communications, 2023Amitkumar Patil +3 more
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Modulating metallic conductive filaments via bilayer oxides in resistive switching memory
Applied Physics Letters, 2019Large fluctuations of key parameters in cation-based resistive random access memory (RRAM), which originate from stochastic growth of metallic conductive filaments, always impose a significant barrier to the practical application of memory devices. Here,
Y. Sun +11 more
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Small, 2018
Transient electronics that can physically vanish in solution can offer opportunities to address the ecological challenges for dealing with the rapidly growing electronic waste. As one important component, it is desirable that memory devices combined with
Jiaqi Xu +6 more
semanticscholar +1 more source
Transient electronics that can physically vanish in solution can offer opportunities to address the ecological challenges for dealing with the rapidly growing electronic waste. As one important component, it is desirable that memory devices combined with
Jiaqi Xu +6 more
semanticscholar +1 more source
Memory array with complementary resistive switch with memristive characteristics
2015 International Conference on Advances in Computing, Communications and Informatics (ICACCI), 2015Emerging solid state memory devices based on different materials and volatility has been widely acknowledged like NVRAMs (or Memristor). Evolution of new solid state ionic conductors and in particular (Memristor) brought impetus to the creation of new domain of larger storage capabilities for the future electronic systems.
Sneha Mohan Patil, S. R. S. Prabhaharan
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Phase-Change and Redox-Based Resistive Switching Memories
Proceedings of the IEEE, 2015This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory.
Dirk J. Wouters +2 more
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Annealing effect on the bipolar resistive switching memory of NiZn ferrite films
Journal of Alloys and Compounds, 2019A detailed understanding of the resistive switching behaviors and relevant physical mechanism is key to controlling nonvolatile memory devices. Pt/Ni0.5Zn0.5Fe2O4/Pt was synthesized by radio frequency magnetron sputtering method at room temperature.
Lei Wu +4 more
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Resistive switching in organic memory devices for flexible applications
2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014The organic resistance memories show great potentials for future flexible applications. In this paper the main challenges and typical recent progress of the organic resistance memory devices are discussed. A kind of single-component polymer resistance memory device based on polychloro-paraxylylene (parylene-C) is focused, with excellent chemical ...
Ru Huang 0001 +5 more
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An electrically modifiable synapse array of resistive switching memory
Nanotechnology, 2009This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio ...
Hyejung, Choi +9 more
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ACS Applied Materials and Interfaces, 2018
Hybrid organic-inorganic perovskite, well-known as light-absorbing materials in solar cells, have recently attracted considerable interest for applications in resistive switching (RS) memory.
Hanlu Ma +9 more
semanticscholar +1 more source
Hybrid organic-inorganic perovskite, well-known as light-absorbing materials in solar cells, have recently attracted considerable interest for applications in resistive switching (RS) memory.
Hanlu Ma +9 more
semanticscholar +1 more source
Metal Oxide Resistive Switching Memory
2011Electrically triggered resistance switching phenomenon in metal oxide was extensively explored for the promising potential as an emerging nonvolatile memory. Prototype chips of large-scale array based on metal oxide memory are currently under development in industry.
Shimeng Yu +2 more
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