Results 271 to 280 of about 167,043 (312)

Blocked Atrial Bigeminy as an Unusual Cause of Bradycardia: A Case Report. [PDF]

open access: yesInt Med Case Rep J
Skakun O   +4 more
europepmc   +1 more source

Dynamically tunable polarized mid-infrared light-emitting diodes from polarization singularities in a band-edge Weyl node. [PDF]

open access: yesNat Commun
Zhang J   +17 more
europepmc   +1 more source

1200V reverse conducting IGBT

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology to our RC-IGBT, the essential characteristics of the ...
null Takahashi   +3 more
openaire   +1 more source

Reversible Conductive Hearing Loss in Mice

Annals of Otology, Rhinology & Laryngology, 1988
Fibrin tissue adhesive was injected into the right ears of four 7-week-old CBA/J mice. Auditory brain stem responses (ABRs) were used to monitor changes in auditory sensitivity over the next 26 days, after which the middle ears and cochleas were examined histologically.
L J, Hood, D B, Webster
openaire   +2 more sources

Reversible Conductance Switching in Molecular Devices

Advanced Materials, 2008
A reliable and reproducible solid-state molecular electronic device that shows bidirectional conductance switching of molecular origin is demonstrated. The devices are manufactured by conventional processing techniques and are based on a molecular monolayer of photochromic diarylethenes, sandwiched between two electrodes, which switches reversibly and ...
Kronemeijer, Auke J.   +6 more
openaire   +1 more source

Conduction, reverse conduction and switching characteristics of GaN E-HEMT

2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2015
In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented.
Charlie Sorensen   +6 more
openaire   +3 more sources

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