Results 251 to 260 of about 50,432 (316)

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

IEEE Transactions on Electron Devices, 2023
In this article, a recessed source trench silicon carbide (SiC) MOSFET with integrated MOS-channel diode (MCD) is proposed and investigated by TCAD simulations.
Jingwei Guo, P. Li, Jie Jiang, W. Zeng, Ruoyu Wang, Hao Wu, Ping Gan, Zhi Lin, S. Hu, Fang Tang   +9 more
semanticscholar   +1 more source

3.0-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse Conduction capability

International Symposium on Power Semiconductor Devices and IC's, 2023
In this work, the low-loss reverse conduction and high threshold voltage characteristics are simultaneously demonstrated in 1 kV/10 A $p$-GaN high electron mobility transistors (HEMTs) on an existing 6-inch process platform, thanks to the combined ...
F. Zhou, Weizong Xu, Yulei Jin, Tianyang Zhou, F. Ren, Dong Zhou, Yuanyang Xia, Leke Wu, Yih-Juan Li, T. Zhu, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu   +13 more
semanticscholar   +1 more source

The ID Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

IEEE Electron Device Letters, 2023
In this work, the impact of reverse conduction stress on the output current ( ${I} _{D}$ ) instability in p-GaN gate HEMT are investigated. With more negative drain stress ( ${V} _{\text {DS}, \text {str}}$ below −5 V), the ${I} _{D, \text {max ...
Xin Chao, Luyu Wang, Xianghui Li, Chengkang Tang, Lin Chen, Chen Wang, Hao Zhu, Q. Sun, D. Zhang   +8 more
semanticscholar   +1 more source

Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability

IEEE Transactions on Electron Devices, 2023
An ultrafast switching lateral insulated gate bipolar transistor (LIGBT) with reverse-conduction (RC) capability is proposed and investigated by simulations.
Jie Wei, Pengcheng Zhu, Kemeng Yang, Kaiwei Dai, Jie Li, Junnan Wang, Zhaoji Li, Bo Zhang, X. Luo   +8 more
semanticscholar   +1 more source

Numerical Study of Novel GaN HEMTs With Integrated SBDs for Ultrahigh Reverse Conduction Capability

IEEE Transactions on Electron Devices, 2021
This brief proposes novel integrated GaN high-electron-mobility transistor (HEMT) with multichannel Schottky barrier diode (SBD) structures to achieve ultrahigh reverse conduction capability and maintain the blocking characteristic at the same time.
Sheng Li, Siyang Liu, Weifeng Sun
exaly   +2 more sources

Modified PWM Scheme to Reduce Reverse Conduction Loss in GaN-Based Independently Controlled Multiple Output Flyback Converter

IEEE transactions on power electronics, 2022
The recently proposed independently controlled multiple output flyback converter (ICMOFC) scheme improves cross-regulation by utilizing gallium nitride (GaN) switches with negative gate turn-off voltage.
A. Sarkar, N. Deshmukh, S. Anand
semanticscholar   +1 more source

Modeling Schottky Diode Rectifiers Considering the Reverse Conduction for RF Wireless Power Transfer

IEEE Transactions on Circuits and Systems - II - Express Briefs, 2022
The aim of this work is to model Schottky diodes series rectifier for application in Radio Frequency Energy Harvesting (RFEH). A time-domain approach is proposed, including the reverse conduction of the diodes, which can significantly degrade the Power ...
R. Trevisoli, H. P. Paz, V. S. Silva, R. Doria, I. Casella, C. E. Capovilla   +5 more
semanticscholar   +1 more source

Reversible Conductive Hearing Loss in Mice

Annals of Otology, Rhinology & Laryngology, 1988
Fibrin tissue adhesive was injected into the right ears of four 7-week-old CBA/J mice. Auditory brain stem responses (ABRs) were used to monitor changes in auditory sensitivity over the next 26 days, after which the middle ears and cochleas were examined histologically.
L J, Hood, D B, Webster
openaire   +2 more sources

Reversible Conductance Switching in Molecular Devices

Advanced Materials, 2008
A reliable and reproducible solid-state molecular electronic device that shows bidirectional conductance switching of molecular origin is demonstrated. The devices are manufactured by conventional processing techniques and are based on a molecular monolayer of photochromic diarylethenes, sandwiched between two electrodes, which switches reversibly and ...
Kronemeijer, Auke J., Akkerman, Hylke B., Kudernac, Tibor, Wees, Bart J. van, Feringa, Ben L., Blom, Paul W.M., Boer, Bert de   +6 more
openaire   +1 more source

Forced Current Balancing of Parallel-Connected SiC JFETs During Forward and Reverse Conduction Mode

IEEE Transactions on Power Electronics, 2017
Sotirios G Kokosis, Stefanos Manias
exaly   +2 more sources