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Conduction, reverse conduction and switching characteristics of GaN E-HEMT [PDF]
2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2015 In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented.
Charlie Sorensen +6 more
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Study of the SiC JFET Reverse Conduction and Reverse Blocking Characteristics
2019 IEEE Applied Power Electronics Conference and Exposition (APEC), 2019SiC JFET is one type of interesting wide bandgap power semiconductor devices and has some potential in a few applications due to its low specific on resistance, fast switching speed and simple structure. However, the device is different from SiC MOSFETs and the engineers may not be familiar with their characteristics.
Xiaoqing Song
exaly +3 more sources
Analytical Conduction Loss Calculation of a MOSFET Three-Phase Inverter Accounting for the Reverse Conduction and the Blanking Time [PDF]
IEEE Transactions on Industrial Electronics, 2021 The reverse conduction capability of MOSFETs is beneficial for the efficiency of a three-phase inverter. In this paper analytical expressions in closed form are presented which allow to quickly evaluate the conduction losses, considering the effect of ...
Alessandro Acquaviva +2 more
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Reliability of p-GaN Gate HEMTs in Reverse Conduction [PDF]
IEEE Transactions on Electron Devices, 2021 Synchronousbuck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction).
Deepthi Cingü +2 more
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$p$ -GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction [PDF]
IEEE Electron Device Letters, 2020 A 700-V normally-off p-GaN gate power transistor with distributed built-in Schottky barrier diode (SBD) is demonstrated in this work. The transistor cell and diode cell are alternately arrayed along the device width and are locally isolated using ion ...
Li Zhang, Jin Wei, Zheyang Zheng
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Research on the Reverse Conduction of Synchronous Rectifiers
IEEE Transactions on Industrial Electronics, 2008Research on the reverse current phenomenon in synchronous rectifiers (SRs) is presented in this paper. For loss reduction, the SRs composed of metal-oxide-semiconductor field-effect transistors (MOSFETs) have recently been employed to replace the conventional rectifiers with diodes in low-voltage and high-current applications.
Po-Yuan Chen +2 more
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Study on the Reverse Conduction of Synchronous Rectifiers
TENCON 2006 - 2006 IEEE Region 10 Conference, 2006A study on the reverse current phenomenon in synchronous rectifiers is presented in this paper. For loss reduction, the synchronous rectifiers composed of MOSFETs have recently been employed to replace the conventional rectifiers with diodes in low voltage and high current applications.
Masahito Jinno +2 more
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Power MOSFETs reverse conduction revisited
PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference, 2002A contribution to the characterization of power MOS transistors under optimized switching behavior is presented. Reverse conduction through the channel resistance is imposed, avoiding the problem of integral diode recovery time without using external diodes. The control circuit design is discussed.
A. Ferreira, M.I.C. Simas
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