Results 261 to 270 of about 50,432 (316)

1200V reverse conducting IGBT

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's, 2004
This report is the first to present the newly developed 1200 V reverse conducting IGBT (RC-IGBT) manufactured by using our thin wafer process technology. The fabricated RC-IGBT operates as both IGBT and free wheeling diode (FWD). Adopting a helium-irradiation carrier lifetime controlling technology to our RC-IGBT, the essential characteristics of the ...
null Takahashi, null Yamamoto, null Aono, null Minato   +3 more
openaire   +1 more source

Reversible conductivity transformations in chalcogenide alloy films

Journal of Non-Crystalline Solids, 1970
Certain amorphous chalcogenide alloys, such as Ge15Te85, exhibit metastable conductivity. These reversible structural changes in amorphous alloys entailing variation in order and conductivity have been made the basis of memory devices.(1) In this paper, we present our observations on induced conductivity transformation from one state to another ...
E. J. Evans, J. H. Helbers, S. R. Ovshinsky   +2 more
openaire   +1 more source

A new cuff electrode for reversible conduction blocking

Journal of Neuroscience Methods, 1991
A cuff electrode of novel design (rigid body and lid) is presented. It contains a closed cavity surrounding the nerve, through which a cooled liquid (Ringer solution) can be circulated. Recording sites at both ends of the cavity permit monitoring of the conduction blocking, which occurs at different temperatures for different units. Reversible blocking
M, Brunner, U T, Koch
openaire   +2 more sources

Progressive and Reversible Conduction Disease With Checkpoint Inhibitors

Canadian Journal of Cardiology, 2017
Novel antineoplastic therapies are focused on harnessing our own immune system to fight cancer. To that end, cytotoxic T-lymphocyte-associated antigen 4 and programmed death ligand 1 are 2 coinhibitory signals that play central roles in decreasing T-cell response and represent a class of medications termed "checkpoint inhibitors." We present an unusual
Neeti, Reddy, Rohit, Moudgil, Juan C, Lopez-Mattei, Kaveh, Karimzad, Elie N, Mouhayar, Neeta, Somaiah, Anthony P, Conley, Shreyaskumar, Patel, Dana E, Giza, Cezar, Iliescu   +9 more
openaire   +2 more sources

Development of SiC Merged Reverse Conductive Devices

IEEJ Transactions on Industry Applications, 2020
AbstractSiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss, and a higher reliability. SiC MRC power devices such as SiC MRC‐MOSFET and SiC MRC‐IGBT can achieve this performance, but have the problems of on‐voltage degradation and ...
openaire   +1 more source

Pyrogallarene-based ion-conducting pores that show reversible conductance properties

Chemical Communications, 2009
Pyrogallol[4]arene macrocycles prepared from pyrogallol and n-dodecanal insert in phospholipid bilayers and form conducting pores that undergo reversible switching over a wide range of potentials.
Ruiqiong, Li, Oleg V, Kulikov, George W, Gokel   +2 more
openaire   +2 more sources

Vertical GaN Power Transistor With Intrinsic Reverse Conduction and Low Gate Charge for High-Performance Power Conversion

IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019
In this paper, a novel vertical normally-off GaN power transistor featuring a split gate with the intrinsic reverse conduction (RCVFET) and low gate charge is proposed.
Qi Zhou, Hong Tao, Liyang Zhu
exaly   +2 more sources

Reverse-Conducting Thyristors

1982
The application of semiconductor devices in power installations is continuously growing due to the improved performance and the resulting cost reductions of such systems. This advancement is made possible by adapting the device characteristics to the cir­cuit requirements. This is particularly the case with reverse-conducting thyristors.
P. De Bruyne, J. Vitins, R. Sittig
openaire   +1 more source

Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode

IEEE Transactions on Electron Devices
In this study, we investigate the reverse conduction diode mode failure mechanism in p-GaN gate high electron mobility transistors (HEMTs) using TCAD simulations and emission microscopy (EMMI).
Wei-Syuan Lin, B. Bakeroot, Zhen-Hong Huang, Ting-Chun Lo, M. Borga, D. Wellekens, Niels Posthuma, S. Decoutere, Tian-Li Wu   +8 more
semanticscholar   +1 more source

Time Reversal in Heat Conduction

American Journal of Physics, 1965
The mathematical consequences of assuming heat conduction (or diffusion of particles) in the same sense as the temperature (or concentration) gradient rather than in the opposite sense leads to time reversal in the partial differential equation and the possibility of computing a prior state of temperature from one known in the present.
openaire   +2 more sources