"Reversed" alamethicin conductance in lipid bilayers
Biophysical Journal, 1991 Alamethicin at a concentration of 2 micrograms/ml on one side of a lipid bilayer, formed at the tip of a patch clamp pipette from diphytanoyl phosphatidylcholine and cholesterol (2:1 mol ratio) in aqueous 0.5 M KCl, 5 mM Hepes, pH 7.0, exhibits an asymmetric current-voltage curve, only yielding alamethicin currents when the side to which the peptide ...
Taylor, R.J., de Levie, R.
openaire +2 more sources
Increased extracellular volume after aortic valve replacement: A footprint of reverse ventricular remodeling that does not affect conduction velocity. [PDF]
J Cardiovasc Magn ResonSobota V +5 more
europepmc +2 more sources
A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery
IEEE Journal of the Electron Devices Society, 2021 A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode ...
Ping Li +3 more
doaj +1 more source
Energies, 2022 Nowadays, power converters with reduced cost, compact size and high efficiency are evolving to overcome the emergent challenges of renewable energy integrations.
Danish Khan +5 more
doaj +1 more source
A Three-Level GaN Driver for High False Turn-ON Tolerance With Minimal Reverse Conduction Loss
IEEE Open Journal of Power Electronics, 2023 This paper presents a three-level gate driver for GaN HEMTs (Gallium Nitride High Electron Mobility Transistors) for high false turn-on tolerance and low reverse conduction loss during both dead time at turn-on and turn-off.
Takehiro Takahashi +4 more
doaj +1 more source
On the effect of nano-injectors on conduction in silicon p-i-n diodes [PDF]
, 2010 P–i–n diodes are widely used in power electronics [1-2], solar cells [3], light detection [4] and also light generation [5]. Contrary to the case of light detection or conversion, light generation is usually achieved by biasing the device in forward mode,
Kovalgin, A.Y., Piccolo, G., Schmitz, J.
core +11 more sources
Recovery of complete left bundle branch block in dilated cardiomyopathy after optimal heart failure treatment: a case report [PDF]
Journal of Medicine and Life ScienceComplete left bundle branch block (CLBBB) is a significant cardiac conduction abnormality often associated with dilated cardiomyopathy (DCM). This case report highlights the improvement in CLBBB and symptom relief through reverse cardiac remodeling in a ...
Geum Ko, Jae-Geun Lee
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Investigation of Dead Time Losses in Inverter Switching Leg Operation: GaN FET vs. MOSFET Comparison
EnergiesThis paper investigates the commutation transients of MOSFET and GaN FET devices in motor drive applications during hard-switching and soft-switching commutations at dead time operation. This study compares the switching behaviors of MOSFETs and GaN FETs,
Vincenzo Barba +4 more
doaj +1 more source
Energy Reports, 2022 The high switching speed of GaN HEMT will cause serious crosstalk in the phase-leg configuration. The negative turn-off driving voltage is usually recommended to avoid the parasitic shoot-through.
Haihong Qin +5 more
doaj +1 more source
Conduction of topologically-protected charged ferroelectric domain walls
, 2011 We report on the observation of nanoscale conduction at ferroelectric domain walls in hexagonal HoMnO3 protected by the topology of multiferroic vortices using in situ conductive atomic force microscopy, piezoresponse force microscopy, and kelvin-probe ...
J. R. Guest +6 more
core +1 more source