Results 161 to 170 of about 230 (201)

Graded‐Interface Dual‐Environment Hydrogel‐Polymer Electrolyte for Stabilized Anode and Sustained Cathode Kinetics in Aqueous Zinc‐Ion Batteries

Advanced Functional Materials, EarlyView.
A graded‐interface hydrogel‐polymer electrolyte decouples water activity to simultaneously stabilize the Zn anode and sustain cathode kinetics. The flexible design supports dendrite‐free cycling over 1600 h, high capacity in both MnO2 and V2O5 full cells, and stable pouch‐cell performance under bending, resolving the fundamental water conflict in ...
Shuyun Wang, Shengmei Chen, Xinyu Wang, Haipeng Wang, Jinsong Zhou, Ka Kiu Keith Cheung, Yiran Ying, Longtao Ma, Juan Antonio Zapien   +8 more
wiley   +1 more source

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Bridgeless Boost Rectifier With Low Conduction Losses and Reduced Diode Reverse-Recovery Problems

IEEE Transactions on Industrial Electronics, 2007
A bridgeless boost rectifier with low conduction losses and reduced diode reverse-recovery problems is proposed for power-factor correction. The proposed boost rectifier can reduce the conduction losses and alleviate the diode reverse-recovery problems by using a coupled inductor and two additional diodes.
Woo-Young Choi, Jung-Min Kwon, Bong-Hwan Kwon   +2 more
exaly   +3 more sources

A single-switch continuous-conduction-mode boost converter with reduced reverse-recovery and switching losses

IEEE Transactions on Industrial Electronics, 2003
A single-switch continuous-conduction-mode boost converter with reduced reverse-recovery and switching losses is proposed. By utilizing the leakage inductances of a pair of coupled inductors and two additional rectifiers, the turn-off rates (di/dt) of the boost output rectifier and the additional rectifiers are slowed down to reduce the reverse ...
Dylan Dah-Chuan Lu, Yim-Shu Lee
exaly   +2 more sources

$p$ -GaN Gate Power Transistor With Distributed Built-in Schottky Barrier Diode for Low-loss Reverse Conduction

IEEE Electron Device Letters, 2020
A 700-V normally-off ${p}$ -GaN gate power transistor with distributed built-in Schottky barrier diode (SBD) is demonstrated in this work. The transistor cell and diode cell are alternately arrayed along the device width and are locally isolated using ion implantations.
Li Zhang, Jin Wei, Zheyang Zheng
exaly   +3 more sources

High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss

Microelectronics Journal, 2023
Yuxi Wei, Kemeng Yang, Siyu Deng
exaly   +2 more sources

3.0-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse Conduction capability

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023
Yiheng Li, Tinggang Zhu
exaly   +2 more sources

Reply to “Nodal conduction block and reversible conduction failure are not electrophysiological markers for axonal loss”

Clinical Neurophysiology, 2021
No abstract ...
Uncini A., Santoro L.
openaire   +2 more sources

Modified PWM Scheme to Reduce Reverse Conduction Loss in GaN-Based Independently Controlled Multiple Output Flyback Converter

IEEE Transactions on Power Electronics, 2022
Arnab Sarkar, Nachiketa Deshmukh, Sandeep Anand   +2 more
exaly   +2 more sources

Reversible Conductive Hearing Loss in Mice

Annals of Otology, Rhinology & Laryngology, 1988
Fibrin tissue adhesive was injected into the right ears of four 7-week-old CBA/J mice. Auditory brain stem responses (ABRs) were used to monitor changes in auditory sensitivity over the next 26 days, after which the middle ears and cochleas were examined histologically.
L J, Hood, D B, Webster
openaire   +2 more sources

Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss

Microelectronics Journal
Chengtao Luo, Xintong Xie, Yuxi Wei
exaly   +2 more sources