Results 181 to 190 of about 230 (201)

A Low Recovery Loss Reverse-Conducting IGBT with Metal/P-body Schottky Junctions for Hard-Switching Applications

ECS Journal of Solid State Science and Technology, 2015
In this paper, a new 1200 V-class reverse-conducting insulated gate bipolar transistor (RC-IGBT) for hard-switching applications is proposed. The proposed structure features deep metal plugs at the emitter-side, and Schottky junctions are formed between the metal plugs and the p-body regions.
Feng, Hao, Yang, Wentao, Sin, Johnny Kin On   +2 more
openaire   +2 more sources

Novel Ultrafast Low-Loss LIGBT With Reverse-Conduction Capability

IEEE Transactions on Electron Devices, 2023
Jie Wei, Pengchen Zhu, Kemeng Yang, Kaiwei Dai, Jie Li, Junnan Wang, Zhaoji Li, Bo Zhang, Xiaorong Luo   +8 more
openaire   +1 more source

Nodal conduction block and reversible conduction failure are not electrophysiological markers for axonal loss

Clinical Neurophysiology, 2021
openaire   +2 more sources

A GaN-on-Si Gate Driver with 14.7X Reduction in Tailing Current Loss and 37.0% Reduction of Reverse Conduction Loss

2023 IEEE Custom Integrated Circuits Conference (CICC), 2023
Hsing-Yen Tsai, Kuo-Lin Zheng, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai   +5 more
openaire   +1 more source

Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction

2022
DC systems, Energy conversion ...
Yu, G. (author), Soeiro, Thiago B. (author), Dong, J. (author), Bauer, P. (author)   +3 more
openaire   +1 more source

An Ultralow Loss Reverse-Conducting LIGBT With Embedded P-P-N Diode in Oxide Trench

IEEE Transactions on Electron Devices, 2022
Yun Xia, Wanjun Chen, Chao Liu, Ruize Sun, Zhaoji Li, Bo Zhang   +5 more
openaire   +1 more source

Low Reverse Conduction Loss β-Ga2O3 Vertical FinFET With an Integrated Fin Diode

IEEE Transactions on Electron Devices, 2023
Yuxi Wei, Zhuolin Jiang, Tao Sun
exaly  

Linear Equivalent Model for VHF Class Φ2 Inverter Based on Spectrum Quantification Method to Reduce GaN Reverse Conduction Loss

IEEE Access, 2021
Desheng Zhang, Dian Lyu, Run Min
exaly  

E-mode p-FET-bridge HEMT: Toward high V_TH, low reverse-conduction loss and enhanced stability

2021 IEEE 14th International Conference on ASIC (ASICON), 2021
Mengyuan Hua, Junting Chen, Chengcai Wang, Lingling Li, Ling Liu, Zheyang Zheng, Kevin J. Chen   +6 more
openaire   +1 more source

High-Efficiency Reverse-Conducting IGBT with Snapback-Free and Low Conduction Loss

2025 4th International Conference on Electronics, Integrated Circuits and Communication Technology (EICCT)
Yi Xiang Bong, Zhi Lin Sim, David Goh, Ignazio Bertuglia, Marianna Rita Alfano, Fang Hao Foo, Wei Mien Chin   +6 more
openaire   +1 more source