4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance [PDF]
Micromachines, 2023 In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics.
Yanjuan Liu, Dezhen Jia, Junpeng Fang
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Temperature-Dependent Reverse-Recovery Behavior Analysis and Circuit-Level Mitigation of Superjunction MOSFETs [PDF]
MicromachinesThis study explores the temperature dependence of reverse-recovery behavior in superjunction metal-oxide-semiconductor field-effect-transistors (MOSFETs) using experiments and Technology Computer-Aided Design (TCAD) simulations. Results show that at 145 °
Wenrong Cui +6 more
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A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
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Failure analysis of high voltage thyristor under impulse during reverse recovery period
电力工程技术, 2022 To acquire the characteristic parameters which demonstrate the state of high voltage thyristor for clarifying its failure mechanism, an experiment platform which can not only generate high voltage pulses to thyristor at different moments during reverse ...
YE Mingtian +4 more
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Reversing Lindblad Dynamics via Continuous Petz Recovery Map [PDF]
Physical Review Letters, 2022 An important issue in developing quantum technology is that quantum states are so sensitive to noise. We propose a protocol that introduces reverse dynamics, in order to precisely control quantum systems against noise described by the Lindblad master equation. The reverse dynamics can be obtained by constructing the Petz recovery map in continuous time.
Hyukjoon Kwon +2 more
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Известия высших учебных заведений России: Радиоэлектроника, 2022 Introduction. Adequate modeling of semiconductor devices with a p–n-junction in reverse bias represents a relevant research problem. The existing quasistatic and non-quasistatic models fail to provide a satisfactory description for the dependence of ...
G. M. Shevchenko, E. V. Semyonov
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A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)
Crystals, 2023 Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance.
Hongyu Cheng +5 more
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A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars
Crystals, 2022 In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance.
Rongyu Gao +6 more
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High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode
Energies, 2022 Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration.
Jaeyeop Na, Minju Kim, Kwangsoo Kim
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Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode
IEEE Access, 2020 In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region.
Sara Hahmady, Stephen Bayne
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