Results 161 to 170 of about 61,074 (210)

Dark Current RTS-Noise in Silicon Image Sensors

, 2000
openaire   +2 more sources

Modeling random telegraph noise under switched bias conditions using cyclostationary rts noise [PDF]

IEEE Transactions on Electron Devices, 2003
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions). This is particularly relevant to analog CMOS circuit design where large signal swings occur and where LF noise is often a limiting factor in the performance of ...
Bram Nauta
exaly   +7 more sources

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RTS Noise Characterization in Flash Cells

IEEE Electron Device Letters, 2008
A method is presented for using noise spectroscopy to efficiently characterize random telegraph signal (RTS) in flash cells, in particular allowing the determination of oxide depth of the traps from the gate voltage dependence of the frequency spectrum of the trap.
Sing-Rong Li, William McMahon, Yin-Lung R. Lu, Yung-Huei Lee   +3 more
exaly   +2 more sources

Integrating RTS noise into circuit analysis

2009 IEEE International Symposium on Circuits and Systems, 2009
A new methodology to include Random Telegraph Signals (RTS) noise in circuit analysis is proposed. The aim of this methodology is to allow integrated circuit designers to study the sensitivity of their circuits to RTS noise and thus minimise the impact of it. In this work, compact models extracted from three-dimensional ‘atomistic’ simulations based on
Tong Boon Tang
exaly   +2 more sources

IDENTIFICATION OF OPTOCOUPLER DEVICES WITH RTS NOISE

Fluctuation and Noise Letters, 2006
The results of noise measurements in low frequency range for CNY 17 type optocouplers are presented. The research were carried out on devices with different values of Current Transfer Ratio (CTR). The methods for identification of Random Telegraph Signal (RTS) in noise signal of optocouplers were proposed.
A. KONCZAKOWSKA, J. CICHOSZ, A. SZEWCZYK, B. STAWARZ   +3 more
exaly   +2 more sources

Improvement of RTS Noise in HgCdTe MWIR Detectors

Journal of Electronic Materials, 2014
Random telegraph signal (RTS) noise is present in all bands of the infrared spectrum from λ c = 2.5 μm (short-wavelength infrared) to λ c = 15.75 μm (very long-wavelength infrared) and decreases the performance of infrared photodetectors.
Brunner, Alexandre, Rubaldo, Laurent, Destefanis, V., Chabuel, F., Kerlain, A., Bauza, D., Baier, N.   +6 more
exaly   +3 more sources

Explaining the amplitude of RTS noise in submicrometer MOSFETs

IEEE Transactions on Electron Devices, 1992
A simple-man's model for the random telegraph signal (RTS) noise amplitude in a submicrometer MOSFET is presented. It is shown that the channel resistance modulation for a specific trap can be expressed as a product of the normalized scattering cross section and of the fractional conductivity change.
Bart Dierickx
exaly   +2 more sources

A New Method for RTS Noise of Semiconductor Devices Identification

IEEE Transactions on Instrumentation and Measurement, 2008
In this paper, a new method, called the noise scattering pattern method (NSP method), for random telegraph signal noise identification in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are included.
Arkadiusz Szewczyk
exaly   +2 more sources