Results 181 to 190 of about 61,074 (210)
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Model of the RTS noise in semiconductor devices
AIP Conference Proceedings, 1993The RTS noise is assumed to be induced by quantum transitions of charge carriers from trap energy levels to both the conductivity and the valence bands. The charge state of the trap controls the channel conductivity in MOSFET’s. Formulas for the time constants describing the RTS noise in a general case of both n‐type and p‐type semiconductors have been
M. Sikulova, J. Sikula
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Electrical noise and RTS fluctuations in advanced CMOS devices
Microelectronics Reliability, 2002Abstract A brief overview of recent issues concerning the low frequency (LF) noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are presented and illustrated through experimental results obtained on advanced CMOS generations. The use of the LF
Gérard Ghibaudo, T. Boutchacha
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IEEE Sensors, 2005., 2006
Models and an extensive set of theoretical findings of residence times difference (RTD) fluxgate have been already presented in previous papers. A very simple sensor structure, negligible onboard power requirements and the intrinsic digital form of the readout signal are the main features of the proposed strategy.
ANDO', Bruno +4 more
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Models and an extensive set of theoretical findings of residence times difference (RTD) fluxgate have been already presented in previous papers. A very simple sensor structure, negligible onboard power requirements and the intrinsic digital form of the readout signal are the main features of the proposed strategy.
ANDO', Bruno +4 more
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RTS Noise in Optoelectronic Coupled Devices
AIP Conference Proceedings, 2005The low frequency noise of optoelectronic coupled devices (OCDs) was measured in the system designed and constructed by the authors. The RTS noise was observed in some devices. The analysis of RTS noise in time and frequency domains is presented. The values of fRTS were found from spectrum and from observed RTS noise on the base of tup and tdown ...
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Non-Poisson Process in RTS-like Noise
AIP Conference Proceedings, 2007RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. RTS noise probability distribution was evaluated and exponential dependence of up and down times corresponding to Poisson process of charge carrier capture and emission events was confirmed in most samples except the ...
Jan Pavelka +2 more
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Broadband noise adaptation of RT at speech frequencies
The Journal of the Acoustical Society of America, 1980As a follow-up to previous studies, 62 college students were adapted to 7 min of random noise. Changes in reaction time (RT) were measured at 0.5, 1, and 3 kHz. Adaptation as measured by an increase in reaction time was measured at all three frequencies. There was a significant decline in RT adaptation as frequency increased. Relation to other findings
James M. Davis +3 more
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RTS noise amplitude and electron concentration in MOSFETs
2010 27th International Conference on Microelectronics Proceedings, 2010Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from sub threshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed.
J. Pavelka +4 more
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RTS and 1/f Noise in Submicron MOSFETs
AIP Conference Proceedings, 2007The capture and emission time constants dependence on drain current for constant gate voltage and variable drain voltage show that probability for charge carrier capture decreases with increasing lateral electric field while emission process is independent on lateral field intensity.
J. Sikula +5 more
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Zero Cross Analysis of RTS Noise
AIP Conference Proceedings, 2005RTS noise of Si MOSFETs and GaN HFET was analysed by means of zero cross method. Noise spectral density of crossing events in 1 ms to 100s windows was flat over 10−5 to 103 frequency range without apparent 1/f noise. The fluctuation of crossing rate was same in every sample, although other noise components next to RTS noise are quite different in Si ...
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1/f And RTS Noise In Submicron Devices: Faster Is Noisier
AIP Conference Proceedings, 2005The origin of 1/f‐like noise in devices is still under discussion. There is one school of thought explaining low‐frequency noise as a surface effect due to trapping and suggesting number fluctuations as the origin. The number of (surface) traps is the key‐parameter.
L. K. J. VANDAMME, MACUCCI, MASSIMO
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