Results 191 to 200 of about 61,074 (210)

Noise Scattering Patterns Method for Recognition of RTS Noise in Semiconductor Components

AIP Conference Proceedings, 2005
A new method for visualization of RTS noise is described. The method is useful in quick selection of semiconductor components for further RTS noise examination. The results of median filtering of RTS noise are also presented.
openaire   +1 more source

1/f noise and RTS in advanced bipolar technologies

SPIE Proceedings, 2003
The low-frequency noise observed on advanced junction bipolar transistors consist of 1/f noise as well as Random telegraph Signals (RTS). In relatively small emitter-base junction areas, RTS is seen in the spectra which can be differentiated from the typical generation-recombination (gr) noise through time domain analysis. For most cases, the 1/f noise
Zeynep Celik-Butler, Md Mazhar Ul Hoque, Enhai Zhao, Darby Lan, Doug Weiser, Joe Trogolo, Keith Green   +6 more
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RTS and 1/f noise in Ge nanowire transistors

2011 21st International Conference on Noise and Fluctuations, 2011
Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO 2 back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10–30% range is usually observed at drain currents below I D =1nA.
D. Pogany, C. Zeiner, S. Bychikhin, T. Burchhart, A. Lugstein, L. K. J. Vandamme   +5 more
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Statistical Analysis of RTS Noise and Low Frequency Noise in 1M MOSFETs Using an Advanced TEG

AIP Conference Proceedings, 2007
In this paper, we developed an advanced Test Element Group (TEG) which can measure Random Telegraph Signal (RTS) noise in over 106 nMOSFETs including various gate sizes with high accuracy in a very short time. We measured and analyzed these noises statistically, as the result, we confirmed that appearance probabilities in the TEG and noise intensities ...
K. Abe, S. Sugawa, S. Watabe, N. Miyamoto, A. Teramoto, M. Toita, Y. Kamata, K. Shibusawa, T. Ohmi   +8 more
openaire   +1 more source

Scaling down and low-frequency noise in MOSFET’s. Are the RTS’s the ultimate components of the 1/f noise?

AIP Conference Proceedings, 1992
A large amount of experimental results show that for MOSFET’s with channel area exceeding 10 μm2, 1/f noise is clearly present, while for transistors of area less than 1 μm2, Random Telegraph Signals (RTS) are emerging, giving rise to lorentzian spectra.This is rather well explained by the carrier number fluctuation model recently developed in our ...
J. Brini, G. Ghibaudo, G. Kamarinos, O. Roux-dit-Buisson   +3 more
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A Robust Approach to Noise for Plan Recognition in RTS Games

2021 IEEE 33rd International Conference on Tools with Artificial Intelligence (ICTAI), 2021
Guillaume Lorthioir, Katsumi Inoue
openaire   +1 more source

RTS Noise Characterization of Trap Properties in InGaAs nFinFETs

IEEE Transactions on Electron Devices, 2023
Xiaolei Xiao, Liang He, Hua Chen, Xianyu Wang, Eddy Simoen, Cor Claeys   +5 more
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MODEL FOR RTS NOISE IN SUB-MICRON MOSFETS

Noise in Physical Systems and 1/F Fluctuations, 2001
ZEYNEP ÇELIK-BUTLER, NUDITHA VIBHAVIE AMARASINGHE, HELENE THEBIEROZ, ANNA ZLOTNICKA   +3 more
openaire   +1 more source

In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors

IEEE Transactions on Electron Devices, 2012
Vincent Goiffon
exaly  

Wavelet Analysis of RTS Noise in CMOS Image Sensors Irradiated With High-Energy Photons

IEEE Transactions on Nuclear Science, 2020
Benjamin Hendrickson, Erik Bodegom
exaly