Results 191 to 200 of about 11,597 (212)
RTS noise reduction of CMOS image sensors using amplifier-selection pixels [PDF]
IEICE Electronics Express, 2013 This paper describes a RTS (random telegraph signal) noise reduction technique for an active pixel CMOS image sensor (CIS) with in-pixel selectable dual source-follower amplifiers.
Mohd Amrallah Mustafa +2 more
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Non-Poisson Process in RTS-like Noise
AIP Conference Proceedings, 2007RTS noise was measured in wide range of semiconductor devices, comprising Si MOSFETs and GaN/AlGaN and InGaAs/InAlAs heterostructures. RTS noise probability distribution was evaluated and exponential dependence of up and down times corresponding to Poisson process of charge carrier capture and emission events was confirmed in most samples except the ...
Jan Pavelka +2 more
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RTS noise amplitude and electron concentration in MOSFETs
2010 27th International Conference on Microelectronics Proceedings, 2010Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from sub threshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed.
J. Pavelka +4 more
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Broadband noise adaptation of RT at speech frequencies
The Journal of the Acoustical Society of America, 1980As a follow-up to previous studies, 62 college students were adapted to 7 min of random noise. Changes in reaction time (RT) were measured at 0.5, 1, and 3 kHz. Adaptation as measured by an increase in reaction time was measured at all three frequencies. There was a significant decline in RT adaptation as frequency increased. Relation to other findings
James M. Davis +3 more
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RTS and 1/f Noise in Submicron MOSFETs
AIP Conference Proceedings, 2007The capture and emission time constants dependence on drain current for constant gate voltage and variable drain voltage show that probability for charge carrier capture decreases with increasing lateral electric field while emission process is independent on lateral field intensity.
J. Sikula +5 more
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Zero Cross Analysis of RTS Noise
AIP Conference Proceedings, 2005RTS noise of Si MOSFETs and GaN HFET was analysed by means of zero cross method. Noise spectral density of crossing events in 1 ms to 100s windows was flat over 10−5 to 103 frequency range without apparent 1/f noise. The fluctuation of crossing rate was same in every sample, although other noise components next to RTS noise are quite different in Si ...
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Noise Scattering Patterns Method for Recognition of RTS Noise in Semiconductor Components
AIP Conference Proceedings, 2005A new method for visualization of RTS noise is described. The method is useful in quick selection of semiconductor components for further RTS noise examination. The results of median filtering of RTS noise are also presented.
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1/f noise and RTS in advanced bipolar technologies
SPIE Proceedings, 2003The low-frequency noise observed on advanced junction bipolar transistors consist of 1/f noise as well as Random telegraph Signals (RTS). In relatively small emitter-base junction areas, RTS is seen in the spectra which can be differentiated from the typical generation-recombination (gr) noise through time domain analysis. For most cases, the 1/f noise
Zeynep Celik-Butler +6 more
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RTS and 1/f noise in Ge nanowire transistors
2011 21st International Conference on Noise and Fluctuations, 2011Random telegraph signal (RTS) and 1/f noise is investigated in Ge nanowire field effect transistors with NiGe Ohmic contacts and a Si/SiO 2 back gate. Dominant, trap-related, two-level or multilevel RTS noise with relative amplitude in the 10–30% range is usually observed at drain currents below I D =1nA.
D. Pogany +5 more
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Statistical Analysis of RTS Noise and Low Frequency Noise in 1M MOSFETs Using an Advanced TEG
AIP Conference Proceedings, 2007In this paper, we developed an advanced Test Element Group (TEG) which can measure Random Telegraph Signal (RTS) noise in over 106 nMOSFETs including various gate sizes with high accuracy in a very short time. We measured and analyzed these noises statistically, as the result, we confirmed that appearance probabilities in the TEG and noise intensities ...
K. Abe +8 more
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