Results 171 to 180 of about 61,074 (210)
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RTS and 1/f Noise in Flash Memory
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2007This work investigates the RTS noise in Flash memory from the perspective of a single cell. In this study, RTS noise in a cell is measured in the frequency domain instead of time domain to increase the efficient identification of individual RTS traps over a broader range of trap lifetime, from seconds to mus in comparison to the conventional time ...
Neal R Mielke
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Methodology of Statistical RTS Noise Analysis With Charge-Carrier Trapping Models
IEEE Transactions on Circuits and Systems I: Regular Papers, 2010Random telegraph signal (RTS) noise has shown an increased impact on circuit performance at advanced complementary metal-oxide-semiconductor technologies. However, there is not yet a computer-aided design tool available to analyze such noise based on the statistical distribution of traps.
Tong Boon Tang
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RTS Noise Characterization in Single-Photon Avalanche Diodes
IEEE Electron Device Letters, 2010Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-μm CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35-μm CMOS technology.
Mohammad Azim Karami +2 more
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RTS noise characterization of HfOx RRAM in high resistive state
Solid-State Electronics, 2013Abstract In this paper we analyze Random Telegraph Signal (RTS) noise and Power Spectral Density (PSD) in hafnium-based RRAMs. RTS measured in HRS exhibits fast and slow multilevel switching events. RTS characteristics are examined through novel color-coded time-lag plots and Hidden Markov Model (HMM) time-series analyses.
Francesco Maria Puglisi +2 more
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Amplitude of RTS noise in MOSFETs
2009 International Conference on Microelectronics - ICM, 2009Low frequency noise of NMOS and PMOS field effect transistors was measured in wide temperature range as a function of applied electric field intensity in longitudinal and perpendicular direction and the influence of sample geometry on 1/f noise and RTS noise was examined for various gate lengths.
Jan Pavelka +3 more
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Key Engineering Materials, 2011
Experiments were carried out for n-channel devices, processed in a 300 nm CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage.
Miloš Chvátal +4 more
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Experiments were carried out for n-channel devices, processed in a 300 nm CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage.
Miloš Chvátal +4 more
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RTS noise in integrated circuits
AIP Conference Proceedings, 1993The objective of this paper is twofold. First, the model theory of the RTS noise developed by Sikulova1 is applied to an analysis of the RTS noise in bipolar Schottky IC’s. This theory makes it possible to evaluate quantities characteristic of the processes of carrier capture, emission, and recombination.
Z. Chobola, P. Vasina, J. Sikula
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On the anomalous behavior of the relative amplitude of RTS noise
Solid-State Electronics, 1998Abstract For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G=ΔI/I=1/N=qgm/WlCoxI often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of strategic (high field region) or less strategic trap positions (low field region) in a non ...
Vandamme, L.K.J., Sodini, D., Gingl, Z.
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The Methods for RTS Noise Identification
AIP Conference Proceedings, 2009In the paper authors present two methods, which allows to identify the RTS noise in noise signal of semiconductor devices. The first one was elaborated to identify the RTS noise and also to estimate the number of its levels. The second one can be used to estimate all of the parameters of Gaussian and non‐Gaussian components in the noise signal in a ...
Alicja Konczakowska +3 more
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GRT model of RTS noise in MOSFETs
2009 International Conference on Microelectronics - ICM, 2009Random Telegraph Signal (RTS) noise in submicron MOSFETs showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics, is analyzed using generation-recombination-tunneling model of current modulation in order to explain quadratic dependence of capture rate on current.
Josef Sikula +3 more
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