Results 171 to 180 of about 11,597 (212)

RTS Noise Characterization in Flash Cells

IEEE Electron Device Letters, 2008
A method is presented for using noise spectroscopy to efficiently characterize random telegraph signal (RTS) in flash cells, in particular allowing the determination of oxide depth of the traps from the gate voltage dependence of the frequency spectrum of the trap.
Sing-Rong Li, William McMahon, Yin-Lung R. Lu, Yung-Huei Lee   +3 more
exaly   +2 more sources

Integrating RTS noise into circuit analysis

2009 IEEE International Symposium on Circuits and Systems, 2009
A new methodology to include Random Telegraph Signals (RTS) noise in circuit analysis is proposed. The aim of this methodology is to allow integrated circuit designers to study the sensitivity of their circuits to RTS noise and thus minimise the impact of it. In this work, compact models extracted from three-dimensional ‘atomistic’ simulations based on
Tong Boon Tang, Alan F Murray
exaly   +2 more sources

1/f And RTS Noise In Submicron Devices: Faster Is Noisier

AIP Conference Proceedings, 2005
The origin of 1/f‐like noise in devices is still under discussion. There is one school of thought explaining low‐frequency noise as a surface effect due to trapping and suggesting number fluctuations as the origin. The number of (surface) traps is the key‐parameter.
L. K. J. VANDAMME, MACUCCI, MASSIMO
openaire   +4 more sources

On the anomalous behavior of the relative amplitude of RTS noise

Solid-State Electronics, 1998
Abstract For the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor ΔG/G=ΔI/I=1/N=qgm/WlCoxI often holds with N the total number of free carriers. Here, strong deviations from this simple behavior will be explained in terms of strategic (high field region) or less strategic trap positions (low field region) in a non ...
Vandamme, L.K.J., Sodini, D., Gingl, Z.
openaire   +2 more sources

IDENTIFICATION OF OPTOCOUPLER DEVICES WITH RTS NOISE

Fluctuation and Noise Letters, 2006
The results of noise measurements in low frequency range for CNY 17 type optocouplers are presented. The research were carried out on devices with different values of Current Transfer Ratio (CTR). The methods for identification of Random Telegraph Signal (RTS) in noise signal of optocouplers were proposed.
A. KONCZAKOWSKA, J. CICHOSZ, A. SZEWCZYK, B. STAWARZ   +3 more
exaly   +2 more sources

Explaining the amplitude of RTS noise in submicrometer MOSFETs

IEEE Transactions on Electron Devices, 1992
A simple-man's model for the random telegraph signal (RTS) noise amplitude in a submicrometer MOSFET is presented. It is shown that the channel resistance modulation for a specific trap can be expressed as a product of the normalized scattering cross section and of the fractional conductivity change.
E Simoen, Bart Dierickx, G J Declerck
exaly   +2 more sources

A New Method for RTS Noise of Semiconductor Devices Identification

IEEE Transactions on Instrumentation and Measurement, 2008
In this paper, a new method, called the noise scattering pattern method (NSP method), for random telegraph signal noise identification in the inherent noise of semiconductor devices is described. A block diagram of a noise measurement system based on the NSP method is presented. Examples of patterns of the NSP method are included.
Arkadiusz Szewczyk
exaly   +2 more sources

RTS and 1/f Noise in Flash Memory

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2007
This work investigates the RTS noise in Flash memory from the perspective of a single cell. In this study, RTS noise in a cell is measured in the frequency domain instead of time domain to increase the efficient identification of individual RTS traps over a broader range of trap lifetime, from seconds to mus in comparison to the conventional time ...
Neal Mielke
exaly   +2 more sources

In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors [PDF]

IEEE Transactions on Electron Devices, 2012
This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process.
Vincent Goiffon
exaly   +2 more sources

Reduction of RTS Noise in Small-Area MOSFETs Under Switched Bias Conditions and Forward Substrate Bias

IEEE Transactions on Electron Devices, 2010
Low-frequency noise in small-area MOSFETs is dominated by random telegraph signal noise associated to the capture and emission of charge carriers by a single trap located in the gate dielectric.
Marc Tiebout, E Sangiorgi, Claudio Fiegna   +2 more
exaly   +2 more sources