Results 201 to 210 of about 11,597 (212)
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AIP Conference Proceedings, 1992
A large amount of experimental results show that for MOSFET’s with channel area exceeding 10 μm2, 1/f noise is clearly present, while for transistors of area less than 1 μm2, Random Telegraph Signals (RTS) are emerging, giving rise to lorentzian spectra.This is rather well explained by the carrier number fluctuation model recently developed in our ...
J. Brini +3 more
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A large amount of experimental results show that for MOSFET’s with channel area exceeding 10 μm2, 1/f noise is clearly present, while for transistors of area less than 1 μm2, Random Telegraph Signals (RTS) are emerging, giving rise to lorentzian spectra.This is rather well explained by the carrier number fluctuation model recently developed in our ...
J. Brini +3 more
openaire +1 more source
A Robust Approach to Noise for Plan Recognition in RTS Games
2021 IEEE 33rd International Conference on Tools with Artificial Intelligence (ICTAI), 2021Guillaume Lorthioir, Katsumi Inoue
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RTS Noise Characterization of Trap Properties in InGaAs nFinFETs
IEEE Transactions on Electron Devices, 2023Xiaolei Xiao +5 more
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MODEL FOR RTS NOISE IN SUB-MICRON MOSFETS
Noise in Physical Systems and 1/F Fluctuations, 2001ZEYNEP ÇELIK-BUTLER +3 more
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Time domain and frequency analysis of RTS noise in deep submicron SiGe HBTs
Nuclear Instruments & Methods in Physics Research B, 2002A Souifi
exaly
On the relative amplitude of RTS noise
1997Vandamme, L.K.J., Sodini, D., Gingl, Z.
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Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image Sensors
P Magnan +2 moreexaly
Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation
Cora Salm +2 moreexaly