Results 271 to 280 of about 765,835 (352)

POSITRON LIFETIME SPECTRA AND SCANNING ELECTRON MICROSCOPE INVESTIGATIONS DURING THE CRYSTAL-LIZATION PROCESS OF AMORPHOUS IONIC CONDUCTOR B2O3-0.7Li2O-0.7LiCl-xAl2O3

open access: hybrid, 1985
Fang Su   +4 more
openalex   +1 more source

Coexisting Rashba/Dresselhaus Spin Splitting in Solution‐Processed Bournonite Films Using Circular Photogalvanic Effect

open access: yesAdvanced Functional Materials, EarlyView.
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell   +5 more
wiley   +1 more source

SI‐bioATRP in Mesoporous Silica for Size‐Exclusion Driven Local Polymer Placement

open access: yesAdvanced Functional Materials, EarlyView.
An enzyme‐catalyzed surface‐initiated atom transfer radical polymerization (SI‐bioATRP) of an anionic monomer within mesoporous silica particles, using hemoglobin as a catalyst, allows for controlling the location of the formed polymer via size‐exclusion effects between the nanopores and the biomacromolecules, thereby opening routes to functional ...
Oleksandr Wondra   +8 more
wiley   +1 more source

Circular‐Polarization‐Sensitive Organic Photodetectors with a Chiral Nanopatterned Electrode Inverse‐Designed by Genetic Algorithm

open access: yesAdvanced Functional Materials, EarlyView.
A chiral photodetector capable of selectively distinguishing left‐ and right‐handed circularly polarized light is experimentally demonstrated. The device, which features a nanopatterned electrode inverse‐designed by a genetic algorithm within a metal–dielectric–metal nanocavity that incorporates a vacuum‐deposited small‐molecule multilayer, exhibits ...
Kyung Ryoul Park   +3 more
wiley   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

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