Results 261 to 270 of about 30,748 (322)
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Volta Potential of Oxidized Aluminum Studied by Scanning Kelvin Probe Force Microscopy
The Journal of Physical Chemistry C, 2010The Volta potential difference (VPD) of oxide layers formed on an aluminum surface as a result of anodization in a neutral solution of boric acid, thermal oxidation in air, and immersion in boiling water was studied by scanning Kelvin probe force microscopy. The measured VPD value was correlated with the layer thickness.
Kiryl A. Yasakau +3 more
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Characterization of cast AlSi(Cu) alloys by scanning Kelvin probe force microscopy
Electrochimica Acta, 2006Abstract The aluminum cast alloys undergo surface treatments involving micro-electrochemistry for improved hardness, wear and/or corrosion resistance. The susceptibility to local galvanic coupling for three different permanent mold cast aluminum alloys, i.e.
L.E. Fratila-Apachitei +2 more
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Corrosion Science, 2006
beta-Mg17Al12, eta-Al8Mn5 and an alpha-magnesium phase have been synthesized from pure components by controlled solidification procedures.
Martin Jönsson +2 more
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beta-Mg17Al12, eta-Al8Mn5 and an alpha-magnesium phase have been synthesized from pure components by controlled solidification procedures.
Martin Jönsson +2 more
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Ultramicroscopy, 2009
Scanning Kelvin probe force microscopy was applied to the microelectrical characterizations of junctions in solar cell devices. Surface Fermi-level pinning effects on the surface potential measurement were avoided by applying a bias voltage (V(b)) to the device and taking the V(b)-induced potential and electric field changes.
C-S, Jiang +5 more
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Scanning Kelvin probe force microscopy was applied to the microelectrical characterizations of junctions in solar cell devices. Surface Fermi-level pinning effects on the surface potential measurement were avoided by applying a bias voltage (V(b)) to the device and taking the V(b)-induced potential and electric field changes.
C-S, Jiang +5 more
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Microelectronic Engineering, 2006
We demonstrate in this paper for the first time the use of Scanning Kelvin Probe Force Microscopy (KFM) to characterize post-CMP copper structures with varying line width and spacing. This work is in the continuity of previously published results concerning surface leakage measurements with conductive Atomic Force Microscopy.
Dominget, Alexandre +2 more
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We demonstrate in this paper for the first time the use of Scanning Kelvin Probe Force Microscopy (KFM) to characterize post-CMP copper structures with varying line width and spacing. This work is in the continuity of previously published results concerning surface leakage measurements with conductive Atomic Force Microscopy.
Dominget, Alexandre +2 more
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Materials Characterization, 2013
Abstract The secondary phase transformations in a commercial super duplex stainless steel were investigated by micro-chemical analyses and high resolution scanning probe microscopy. Energy dispersive X-ray and electron probe detected ferrite and austenite as well as secondary phases in unetched aged duplex stainless steel type 25Cr 7Ni 3Mo.
J. Ramírez-Salgado +4 more
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Abstract The secondary phase transformations in a commercial super duplex stainless steel were investigated by micro-chemical analyses and high resolution scanning probe microscopy. Energy dispersive X-ray and electron probe detected ferrite and austenite as well as secondary phases in unetched aged duplex stainless steel type 25Cr 7Ni 3Mo.
J. Ramírez-Salgado +4 more
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Work Function, Contact Potential, and Kelvin Probe Scanning Force Microscopy
2015We already used the term work function when we introduced the tunneling barrier height in STM. The work function can be considered as the energy difference between the vacuum level and the Fermi level of a metal. Here we will see that also a surface term contributes to the work function.
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Applied Physics Letters, 2009
We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface potential directly via Kelvin probe force microscopy and ...
E. Koren +4 more
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We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface potential directly via Kelvin probe force microscopy and ...
E. Koren +4 more
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Japanese Journal of Applied Physics, 2017
We have observed a commercial silicon-carbide Schottky barrier diode (SiC-SBD) using our novel analysis system, in which atomic force microscopy (AFM) is combined with both Kelvin probe force microscopy (KFM; for surface-potential measurement) and scanning capacitance force microscopy (SCFM; for differential-capacitance measurement).
Takeshi Uruma +2 more
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We have observed a commercial silicon-carbide Schottky barrier diode (SiC-SBD) using our novel analysis system, in which atomic force microscopy (AFM) is combined with both Kelvin probe force microscopy (KFM; for surface-potential measurement) and scanning capacitance force microscopy (SCFM; for differential-capacitance measurement).
Takeshi Uruma +2 more
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