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Investigation of Hydrogen Evolution and Enrichment by Scanning Kelvin Probe Force Microscopy
Electrochemistry Communications, 2013 Abstract It has been a challenge to detect the real-time distribution of hydrogen at the micro-level. In this study, a scanning Kelvin probe force microscopy (SKPFM) was employed to characterize the surface potential changes induced by hydrogen. Variations of the surface potential were used to assess (a) the real-time distribution of hydrogen, (b ...
Yu Yan, Jinxu Li
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Practical aspects of single-pass scan Kelvin probe force microscopy
Review of Scientific Instruments, 2012The single-pass scan Kelvin probe force microscopy (KPFM) in ambient condition has a few advantages over the dual-pass lift-up scan KPFM. For example, its spatial resolution is expected to be higher; and its topographical errors caused by electrostatic forces are minimized because electrostatic forces are actively suppressed during the simultaneous ...
Guangyong, Li +3 more
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Compensating electrostatic forces by single-scan Kelvin probe force microscopy
Nanotechnology, 2007We describe a novel method of single-scan Kelvin probe force microscopy, operating simultaneously with amplitude-modulation distance control in ambient air. A separate Kelvin probe feedback control loop compensates for potential differences between tip and sample by minimizing electrostatic forces.
Dominik Ziegler +3 more
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Scanning Probe Microscopy: Ultrasonic Force and Scanning Kelvin Probe Force Microscopy
2004In 1981, Gerd Binning and Heinrich Rohree at IBM Zurich developed the first generation of the scanning probe microscope, the scanning tunneling microscope for which they received the Noble Prize in physics. The Scanning Tunneling Microscope (STM) was a fantastic breakthrough with its capability to image atoms with angstrom precision.
C. Druffner +4 more
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Japanese Journal of Applied Physics, 2016
Abstract We have developed a scanning probe microscope (SPM) that combines atomic force microscopy (AFM) with both Kelvin probe force microscopy (KFM — to measure the surface potential) and scanning capacitance force microscopy (SCFM — to measure the differential capacitance).
Takeshi Uruma +2 more
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Abstract We have developed a scanning probe microscope (SPM) that combines atomic force microscopy (AFM) with both Kelvin probe force microscopy (KFM — to measure the surface potential) and scanning capacitance force microscopy (SCFM — to measure the differential capacitance).
Takeshi Uruma +2 more
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Journal of The Electrochemical Society, 2003
In this study, the Volta potential distribution over the surface of duplex stainless steels (DSSs) has been mapped for the first time with submicrometer resolution by scanning Kelvin probe force microscopy (SKPFM). The different magnetic properties of ferrite and austenite enable the utilization of magnetic force microscopy (MFM) for visualizing their ...
M. Femenia +3 more
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In this study, the Volta potential distribution over the surface of duplex stainless steels (DSSs) has been mapped for the first time with submicrometer resolution by scanning Kelvin probe force microscopy (SKPFM). The different magnetic properties of ferrite and austenite enable the utilization of magnetic force microscopy (MFM) for visualizing their ...
M. Femenia +3 more
openaire +1 more source
Applied Physics Letters, 2009
We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface potential directly via Kelvin probe force microscopy and ...
Lincoln J Lauhon, Y Rosenwaks, J E Allen
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We use Kelvin probe force microscopy and scanning photocurrent microscopy to measure the doping distribution along single phosphorous-doped silicon nanowire grown by the vapor-liquid-solid method. A nonlinear potential drop along biased silicon nanowires is detected both by measuring the surface potential directly via Kelvin probe force microscopy and ...
Lincoln J Lauhon, Y Rosenwaks, J E Allen
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Ultramicroscopy, 2009
Scanning Kelvin probe force microscopy was applied to the microelectrical characterizations of junctions in solar cell devices. Surface Fermi-level pinning effects on the surface potential measurement were avoided by applying a bias voltage (V(b)) to the device and taking the V(b)-induced potential and electric field changes.
C-S, Jiang +5 more
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Scanning Kelvin probe force microscopy was applied to the microelectrical characterizations of junctions in solar cell devices. Surface Fermi-level pinning effects on the surface potential measurement were avoided by applying a bias voltage (V(b)) to the device and taking the V(b)-induced potential and electric field changes.
C-S, Jiang +5 more
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Micron, 2015
The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution.
Grzegorz Wielgoszewski +7 more
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The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution.
Grzegorz Wielgoszewski +7 more
openaire +2 more sources