Results 251 to 260 of about 4,360,674 (289)

Characterization of cast AlSi(Cu) alloys by scanning Kelvin probe force microscopy

Electrochimica Acta, 2006
Abstract The aluminum cast alloys undergo surface treatments involving micro-electrochemistry for improved hardness, wear and/or corrosion resistance. The susceptibility to local galvanic coupling for three different permanent mold cast aluminum alloys, i.e.
L.E. Fratila-Apachitei, I. Apachitei, J. Duszczyk   +2 more
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Volta Potential of Oxidized Aluminum Studied by Scanning Kelvin Probe Force Microscopy

The Journal of Physical Chemistry C, 2010
The Volta potential difference (VPD) of oxide layers formed on an aluminum surface as a result of anodization in a neutral solution of boric acid, thermal oxidation in air, and immersion in boiling water was studied by scanning Kelvin probe force microscopy. The measured VPD value was correlated with the layer thickness.
Kiryl A. Yasakau, Andrei N. Salak, Mikhail L. Zheludkevich, Mário G. S. Ferreira   +3 more
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Detection of secondary phases in duplex stainless steel by magnetic force microscopy and scanning Kelvin probe force microscopy

Materials Characterization, 2013
Abstract The secondary phase transformations in a commercial super duplex stainless steel were investigated by micro-chemical analyses and high resolution scanning probe microscopy. Energy dispersive X-ray and electron probe detected ferrite and austenite as well as secondary phases in unetched aged duplex stainless steel type 25Cr 7Ni 3Mo.
J. Ramírez-Salgado, M.A. Domínguez-Aguilar, B. Castro-Domínguez, P. Hernández-Hernández, R.C. Newman   +4 more
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Cross-sectional observation in nanoscale for Si power MOSFET by atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy

Japanese Journal of Applied Physics, 2019
Abstract Scanning probe microscopy and corresponding evaluation methods enabled nanoscale observation of power semiconductor devices regardless of the material and structure types. We acquired cross-sectional images of a power metal-oxide-semiconductor field-effect transistor (MOSFET) with a Si superjunction (SJ) structure using a ...
Atsushi Doi, Mizuki Nakajima, Sho Masuda, Nobuo Satoh, Hidekazu Yamamoto   +4 more
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Scanning Kelvin Probe Force Microscopy as Tool for the Investigation of Localized Corrosion

ECS Meeting Abstracts, 2014
In this presentation it will be shown that the Scanning Kelvin Probe Force Microscopy (SKPFM) is a powerful tool for the characterization of corrosion processes at the microscopic level, especially underneath organic coatings, see e.g. [1-3], but also on the uncoated surface, see e.g. [4].
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Applications and Limitations of Scanning Kelvin Probe Force Microscopy for the Surface Analysis of Aluminum Alloys

Journal of The Electrochemical Society, 2006
The surface properties of aluminum alloy 2024-T3 (AA2024-T3) sheet after several surface treatments were investigated using scanning Kelvin probe force microscopy (SKPFM) and scanning electron microscopy (SEM). Treatments included boiling water, sodium chloride solution, and a chromate-free deoxidizing solution.
T. H. Muster, A. E. Hughes
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Characterization of post-copper CMP surface with scanning probe microscopy: Part II: Surface potential measurements with scanning Kelvin probe force microscopy

Microelectronic Engineering, 2006
We demonstrate in this paper for the first time the use of Scanning Kelvin Probe Force Microscopy (KFM) to characterize post-CMP copper structures with varying line width and spacing. This work is in the continuity of previously published results concerning surface leakage measurements with conductive Atomic Force Microscopy.
Dominget, Alexandre, Farkas, J., Szunerits, Sabine   +2 more
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Scanning probe study on the photovoltaic characteristics of a Si solar cell by using Kelvin force microscopy and photoconductive atomic force microscopy

Thin Solid Films, 2013
Abstract Poly-Si-based solar cells, prepared via conventional Si processes including phosphoryl chloride(POCl 3 ) doping and diffusion, were investigated in this study in terms of their electrical and optical properties, including open-circuit voltage ( V oc ), short-circuit current ( I sc ), fill factor, external quantum efficiency and efficiency,
Jinhee Heo, Soonho Won
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Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

Applied Physics Letters, 2000
Scanning capacitance microscopy (SCM) and Kelvin probe force microscopy (KPFM) are used to image the electrical structure of a silicon pn junction under applied bias. With SCM, the carrier density inside a diode is imaged directly. With KPFM, the surface potential distribution of an operating diode is measured, revealing different behavior from that in
G. H. Buh, H. J. Chung, C. K. Kim, J. H. Yi, I. T. Yoon, Y. Kuk   +5 more
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Work Function, Contact Potential, and Kelvin Probe Scanning Force Microscopy

2015
We already used the term work function when we introduced the tunneling barrier height in STM. The work function can be considered as the energy difference between the vacuum level and the Fermi level of a metal. Here we will see that also a surface term contributes to the work function.
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