Results 241 to 250 of about 2,228,604 (285)
, 2005 Scanning capacitance force microscopy and Kelvin probe force microscopy are used to image Sn nanometer sized structures embedded in silicon oxide thin films. The capacitance variation occurring between probe and sample in presence of a metallic cluster modifies the oscillation amplitude of the AFM probe at twice the frequency of the applied voltage ...
G Tallarida, S Spiga, M Fanciulli
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ACS Nano, 2014
Abstract We study surface photovoltage decays on sub-millisecond time scales in organic solar cells using intensity-modulated scanning Kelvin probe microscopy (SKPM). Using polymer/fullerene (poly[N-9″-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)]/[6,6]-phenyl C71-butyric acid methyl ester, PCDTBT ...
Huan-Xin Ju, Guozheng Shao, David Ginger
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Abstract We study surface photovoltage decays on sub-millisecond time scales in organic solar cells using intensity-modulated scanning Kelvin probe microscopy (SKPM). Using polymer/fullerene (poly[N-9″-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)]/[6,6]-phenyl C71-butyric acid methyl ester, PCDTBT ...
Huan-Xin Ju, Guozheng Shao, David Ginger
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Simulation and Correction of Geometric Distortions in Scanning Kelvin Probe Microscopy
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2000Capacitance due to geometric influence of the finite tip shape and influence of distant surface points can lead to artifacts in scanning Kelvin probe microscopy (SKPM) images. These artifacts appear as features in the SKPM image which are due only to tip/surface geometry and not to true surface potential variations. They can also cause blurring of real
Anton E. Efimov, Sidney Cohen
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Real versus Measured Surface Potentials in Scanning Kelvin Probe Microscopy
ACS Nano, 2008 Noncontact potentiometry or scanning Kelvin probe microscopy (SKPM) is a widely used technique to study charge injection and transport in (in)organic devices by measuring a laterally resolved local potential. This technique suffers from the significant drawback that experimentally obtained curves do not generally reflect the true potential profile in ...
Charrier, D.S.H. +4 more
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Applied Physics Letters, 2001
Scanning Kelvin probe microscopy (SKPM) is a unique way to measure electrostatic potentials for small geometries. It has numerous applications including characterization of integrated circuits and nanoscale devices. SKPM is attractive because of the quantitative nature of the measurements.
Michael G. Spencer, G Koley
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Scanning Kelvin probe microscopy (SKPM) is a unique way to measure electrostatic potentials for small geometries. It has numerous applications including characterization of integrated circuits and nanoscale devices. SKPM is attractive because of the quantitative nature of the measurements.
Michael G. Spencer, G Koley
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ACS Nano, 2013 Using environmental scanning Kelvin probe microscopy we show that the position of the Fermi level of single layer graphene is more sensitive to chemical gating than that of double layer graphene.
Jens Eriksson +2 more
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Localized charge imaging with scanning Kelvin probe microscopy
Nanotechnology, 2016Abstract In this work, we propose an intuitive and easily implementable approach to model and interpret scanning Kelvin probe microscopy images of insulating samples with localized charges. The method, based on the image charges method, has been validated by a systematic comparison of its predictions with experimental measurements ...
M F, Orihuela +4 more
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Lateral resolution in scanning Kelvin probe microscopy
Corrosion Science, 2016Abstract The lateral resolution of a scanning Kelvin probe (SKP) is a key parameter for investigating microstructures. It depends on two main device parameters, the tip diameter and the tip sample distance. Variation of them affects physical parameters like stray capacitance and signal intensity.
Mariusz Wicinski +2 more
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Scanning Kelvin Probe Microscopy Investigation of the Role of Minority Carriers on the Switching Characteristics of Organic Field-Effect Transistors [PDF]
Advanced Materials, 2016 We have developed a Scanning Kelvin Probe Microscopy (SKPM) based method to probe the effects of low-mobility minority carriers on the switching characteristics of organic field effect transistors (OFETs).
Yuanyuan Hu +2 more
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