Results 181 to 190 of about 58,719 (283)

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

Emergence of Double‐Dome Superconductivity in the Pressurized Dirac Semimetal BaMg2Bi2

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Dirac semimetal BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ is reported to be a unique topological material that manifests surface superconductivity that coexists with bulk band topology at ambient pressure. Here, we present a comprehensive investigation of high‐pressure superconducting properties in BaMg2${\rm BaMg}_{2}$Bi2${\rm Bi}_{2}$ single ...
Qi Wang   +5 more
wiley   +1 more source

Point Defects and Their Dynamic Behaviors in Silver Monolayer Intercalated between Graphene and SiC. [PDF]

open access: yesNano Lett
Pham VD   +6 more
europepmc   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

Self-Assembly of (l)-Cysteine Molecules at Ag(110): A Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy Study. [PDF]

open access: yesLangmuir
Mkrtchian E   +11 more
europepmc   +1 more source

Electric Field‐Induced Hole‐ and Electron‐Type Flat Bands in Twisted Double Bilayer Graphene

open access: yesAdvanced Electronic Materials, EarlyView.
The electronic structure of twisted double bilayer graphene is visualized using angle‐resolved photoemission spectroscopy with micrometer spatial resolution at twists of 3.1∘$^\circ$ and 6.0∘$^\circ$ as a function of gate voltage. Tunable hybridization effects and flat band formation occurs between valence and conduction band states due to a finite ...
Zhihao Jiang   +13 more
wiley   +1 more source

Structural and electronic signatures of strain-tunable marginally twisted bilayer graphene. [PDF]

open access: yesNatl Sci Rev
Ouyang P   +13 more
europepmc   +1 more source

Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence

open access: yesAdvanced Electronic Materials, EarlyView.
Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang   +6 more
wiley   +1 more source

Stable vortices in the anomalous metallic state observed on monoatomic-layer superconductors. [PDF]

open access: yesSci Adv
Sato Y   +6 more
europepmc   +1 more source

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