Results 41 to 50 of about 2,042,987 (291)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal α-Sn

APL Materials, 2020
In-plane compressively strained α-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal.
Ivan Madarevic, Umamahesh Thupakula, Gertjan Lippertz, Niels Claessens, Pin-Cheng Lin, Harsh Bana, Sara Gonzalez, Giovanni Di Santo, Luca Petaccia, Maya Narayanan Nair, Lino M.C. Pereira, Chris Van Haesendonck, Margriet J. Van Bael   +12 more
doaj   +1 more source

Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials

Scientific Reports, 2021
The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi2Sr2CaCu2O8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and ...
Dong-Hwan Choi, Kyung-Ah Min, Suklyun Hong, Bum-Kyu Kim, Myung-Ho Bae, Ju-Jin Kim   +5 more
doaj   +1 more source

Effect of CO Molecule Orientation on the Reduction of Cu-Based Nanoparticles

Nanomaterials, 2021
The adsorption of CO on the surface of Cu-based nanoparticles was studied in the presence of an external electric field by means of scanning tunneling microscopy (STM) and spectroscopy (STS).
Sergey Y. Sarvadii, Andrey K. Gatin, Vasiliy A. Kharitonov, Nadezhda V. Dokhlikova, Sergey A. Ozerin, Maxim V. Grishin, Boris R. Shub   +6 more
doaj   +1 more source

Tunneling spectroscopy of magnetic tunnel junctions [PDF]

, 2010
Drewello V. Tunneling spectroscopy of magnetic tunnel junctions. Bielefeld (Germany): Bielefeld University; 2010.In this thesis, magnetic tunnel junctions based on MgO barriers have been prepared and investigated.
Drewello, Volker
core  

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Imaging isodensity contours of molecular states with STM

New Journal of Physics, 2017
We present an improved way for imaging the density of states of a sample with a scanning tunneling microscope, which consists in mapping the surface topography while keeping the differential conductance (d I /d V ) constant.
Gaël Reecht, Benjamin W Heinrich, Hervé Bulou, Fabrice Scheurer, Laurent Limot, Guillaume Schull   +5 more
doaj   +1 more source

Electrochemical tip-enhanced Raman spectroscopy imaging with 8 nm lateral resolution

Electrochemistry Communications, 2019
Herein, we report tip-enhanced Raman spectroscopy (TERS) hyperspectral imaging under electrochemical control of a non-Raman-resonant molecular compound. A new setup combining a Scanning Tunneling Microscope (STM) and an optical coupling with high signal ...
Thomas Touzalin, Suzanne Joiret, Ivan T. Lucas, Emmanuel Maisonhaute   +3 more
doaj   +1 more source

Spectroscopy of a Deterministic Single-Donor Device in Silicon [PDF]

, 2012
We present a single electron transistor (SET) based on an individual phosphorus dopant atom in an epitaxial silicon environment. Using scanning tunneling microscope (STM) hydrogen lithography, the single impurity is deterministically placed with a ...
H. Ryu, M. Fuechsle, L. C. L. Hollenberg, G. Klimeck, Klimeck, G., Mahapatra, S., S. Mahapatra, Lee, S., Miwa, J. A., O. Warschkow, Simmons, M. Y., Warschkow, O., Ryu, H., M. Y. Simmons, Fuechsle, M., Hollenberg, L. C. L., J. A. Miwa, S. Lee   +17 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source