Results 61 to 70 of about 58,719 (283)

Proximity Effect between Two Superconductors Spatially Resolved by Scanning Tunneling Spectroscopy

Physical Review X, 2014
We present a combined experimental and theoretical study of the proximity effect in an atomic-scale controlled junction between two different superconductors.
V. Cherkez, J. C. Cuevas, C. Brun, T. Cren, G. Ménard, F. Debontridder, V. S. Stolyarov, D. Roditchev   +7 more
doaj   +1 more source

Differential Conductance and Quantum Interference in Kondo Systems

, 2010
We present a large-N theory for the differential conductance, dI/dV, in Kondo systems measured via scanning tunneling spectroscopy. We demonstrate that quantum interference between tunneling processes into the conduction band and into the magnetic f ...
Figgins, Jeremy, Morr, Dirk K.
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Engineering Negative Differential Conductance with the Cu(111) Surface State

, 2011
Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate electron tunneling from a C60-terminated tip into a Cu(111) surface.
B. W. Heinrich, D.-J. Choi, L. Limot, M. V. Rastei, R. L. Carter, T. Frederiksen   +5 more
core   +1 more source

Scanning Tunneling Spectroscopy of Graphene on Graphite [PDF]

Physical Review Letters, 2009
We report low temperature high magnetic field scanning tunneling microscopy and spectroscopy of graphene flakes on graphite that exhibit the structural and electronic properties of graphene decoupled from the substrate. Pronounced peaks in the tunneling spectra develop with field revealing a Landau level sequence that provides a direct way to identify ...
Li, Guohong, Luican, Adina, Andrei, Eva Y.   +2 more
openaire   +3 more sources

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Gate-Controlled Ionization and Screening of Cobalt Adatoms on a Graphene Surface

, 2010
We describe scanning tunneling spectroscopy (STS) measurements performed on individual cobalt (Co) atoms deposited onto backgated graphene devices. We find that Co adatoms on graphene can be ionized by either the application of a global backgate voltage ...
Alex Zettl, AV Shytov, B Uchoa, BC Stipe, C Jang, D Goldhaber-Gordon, DC Elias, F Marczinowski, G Paolo, Hans-Michael Solowan, Hoonkyung Lee, J Kondo, JH Chen, JP Perdew, K Pi, K Teichmann, Kevin T. Chan, KS Novoselov, KT Chan, Lorenzo Maserati, M Yuliang, Marvin L. Cohen, Michael F. Crommie, NA Pradhan, RM Feenstra, Régis Decker, S Adam, S Baroni, S Luryi, Steven G. Louie, T Markus, TO Wehling, TO Wehling, Victor W. Brar, VM Pereira, VM Pereira, X Li, XH Qiu, Y Zhang, Yang Wang, Çağlar O. Girit   +40 more
core   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

New Journal of Physics, 2015
We report the study of single dangling bonds (DBs) on a hydrogen-terminated silicon (100) surface using a low-temperature scanning tunneling microscope.
Hatem Labidi, Marco Taucer, Mohammad Rashidi, Mohammad Koleini, Lucian Livadaru, Jason Pitters, Martin Cloutier, Mark Salomons, Robert A Wolkow   +8 more
doaj   +1 more source

Transport properties of Cu-AlF3-W and Cu-AlF3-Cu heterojunctions using STS measurements and a DFT-NEGF approach

Results in Physics, 2018
To understand and to analyze the transport properties of different metal-insulator systems, we developed an experimental study of the electronic transport properties of AlF3 thin films deposited over a Cu(1 0 0) substrate, and a theoretical study to ...
J.L. Navarro, J.C. Moreno-López, A.E. Candia, E.A. Albanesi, M.C.G. Passeggi, Jr   +4 more
doaj   +1 more source