Results 221 to 230 of about 1,741,103 (246)

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Mimicking Pavlovian Conditioning with WSe<sub>2</sub> Phototransistors. [PDF]

open access: yesACS Appl Mater Interfaces
Sessa A   +11 more
europepmc   +1 more source

<i>V</i><sub>TH</sub>-Adjustable p-Channel GaN Field-Effect Transistor with an Inserted n-GaN Layer. [PDF]

open access: yesMicromachines (Basel)
Liu Y   +10 more
europepmc   +1 more source

Unlocking the potential of magnetic nanomaterials in photocatalysis: a review of recent progress and future perspectives. [PDF]

open access: yesRSC Adv
Naseem S   +8 more
europepmc   +1 more source

Polymer–Metal Schottky Contact with Direct-Current Outputs

open access: yesAdvanced Materials, 2016
Polymer-Metal Schottky Contact with Direct-Current ...
Hao Shao, Liming Dai, Tong Lin
exaly   +1 more source

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