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Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling. [PDF]

ACS Omega
Karaca A, Yıldız DE, Tataroğlu A.
europepmc   +1 more source

Design of a Low-Power RFID Sensor System Based on RF Energy Harvesting and Anti-Collision Algorithm. [PDF]

Sensors (Basel)
Mao X, Zhu X, Lei J.
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Study on single event burnout mechanism on the “step current” of SiC schottky diodes

Yanan Liang, Ziyu Wang, Rui Chen, Jianwei Han, Bing Liu, Qian Chen, Shipeng Shangguan   +6 more
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Single-Dislocation Schottky Diodes

Nano Letters, 2021
Dislocations often exhibit unique physical properties distinct from those of the bulk material. However, functional applications of dislocations are challenging due to difficulties in the construction of high-performance devices of dislocations. Here we demonstrate unidirectional single-dislocation Schottky diode arrays in a Fe2O3 thin film on Nb-doped
Ang Tao, Tingting Yao, Yixiao Jiang, Lixin Yang, Xuexi Yan, Hiromichi Ohta, Yuichi Ikuhara, Chunlin Chen, Hengqiang Ye, Xiuliang Ma   +9 more
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Ferroelectric Schottky Diode

Physical Review Letters, 1994
A Schottky contact consisting of a semiconducting ferroelectric material and a high work function metal shows a bistable conduction characteristic. An on/off ratio of about 2 orders of magnitude was obtained in a structure consisting of a 0.2 \ensuremath{\mu}m ferroelectric PbTi${\mathrm{O}}_{3}$ film, a Au Schottky contact, and a ${\mathrm{La}}_{0.5}$$
, Blom, , Wolf, , Cillessen, , Krijn
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Molecules that mimic Schottky diodes

Physical Chemistry Chemical Physics, 2006
Self-assembled monolayers of cationic donor-(pi-bridge)-acceptor dyes coupled with anionic donors exhibit asymmetric current-voltage (I-V) characteristics when contacted by Au or PtIr probes. Rectification ratios of 3000 at +/- 1 V are obtained from Au-S-C10H20-A+-pi-D|D-|Au structures in which the cationic moiety is 5-(4-dimethylaminobenzylidene)-5,6 ...
Geoffrey J, Ashwell, Barbara, Urasinska, Wayne D, Tyrrell   +2 more
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Carbon–Silicon Schottky Barrier Diodes

Small, 2012
The simple fabrication of high-performance Schottky barrier diodes between silicon and conductive carbon films (C-Films) is reported. By optimizing the interface, ideality factors as low as n = 1.22 for pyrolytic photoresist films (PPF) have been obtained.
Chanyoung, Yim, Niall, McEvoy, Ehsan, Rezvani, Shishir, Kumar, Georg S, Duesberg   +4 more
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GaN Power Schottky Diodes

ECS Meeting Abstracts, 2012
Abstract not Available.
Randy P. Tompkins, Joshua R. Smith, Shuai Zhou, Kevin W. Kirchner, Michael A. Derenge, Kenneth A. Jones, Greg Mulholland, Puneet Suvarna, Mihir Tungare, Shadi Shahedipour-Sandvik   +9 more
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Schottky barrier diodes

Journal of Physics E: Scientific Instruments, 1972
The experiment described was performed by an undergraduate in his final term at the University. A Schottky diode prepared by the evaporation of Au on to n type GaAs was used to measure the donor density profile in the semiconductor and to demonstrate the effects of deeper levels.
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Modelling Power Schottky Diodes

2006 International Conference - Modern Problems of Radio Engineering, Telecommunications, and Computer Science, 2006
This paper is concerned with modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal macromode) of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.
Janusz Zarebski, Jacek Dabrowski
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