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Gold/Ga0.85Al0.15Sb Schottky diodes
Journal of Applied Physics, 1985Gold on n-type Ga0.85Al0.15Sb devices were prepared and characterized. Current versus voltage (I-V) and capacitance versus voltage (C-V) measurements are discussed following the classical models of thermionic field emission and metal-insulator-semiconductor devices.
L. Gouskov +5 more
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1998
A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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A Schottky barrier diode consists of a rectifying metal-semiconductor contact with a N-drift region, designed to support the required reverse voltage as shown in Fig. 3.1. Forward conduction in the Schottky diode occurs by the transport of majority carriers (electrons) across the metal-semiconductor barrier Baliga, 1996.
Ranbir Singh, B. Jayant Baliga
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IEEE Transactions on Microwave Theory and Techniques, 1977
The super-Schottky-barrier diode, a superconductor-semiconductor tunneling junction, has been established as the most sensitive detector of microwaves. These record sensitivities were obtained in both the video and mixing modes of operation. Measurements at X-band have yielded a video NEP of 5 x 10/sup -16/ W/Hz/sup 1/2/ and a mixer input noise ...
F.L. Vernon +5 more
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The super-Schottky-barrier diode, a superconductor-semiconductor tunneling junction, has been established as the most sensitive detector of microwaves. These record sensitivities were obtained in both the video and mixing modes of operation. Measurements at X-band have yielded a video NEP of 5 x 10/sup -16/ W/Hz/sup 1/2/ and a mixer input noise ...
F.L. Vernon +5 more
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Photosensitive barium titanate Schottky diodes
IEEE Transactions on Electron Devices, 1968The observation of photocurrents generated in Schottky barrier diodes on Remeika-grown reduced barium titanate is reported. Photon-to-electron conversion efficiencies of 5% at 0.3 μm have been measured which suggests that the effect may be large enough for employment in practical devices.
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Nano Research, 2014
The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of ∼107 at ±2 V and a low reverse leakage current of 1.0 × 10−8 A/cm2 at −5 V were observed.
Seongjun Kim +5 more
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The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of ∼107 at ±2 V and a low reverse leakage current of 1.0 × 10−8 A/cm2 at −5 V were observed.
Seongjun Kim +5 more
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Physica Status Solidi (a), 1991
Cette diode se comporte plus ou moins comme une structure MIS avec une couche d'oxyde naissante minimum. Les hauteurs de barriere, obtenues a partir de la caracteristique courant-tension et de la methode de photoreponse, sont a peu pres egales.
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Cette diode se comporte plus ou moins comme une structure MIS avec une couche d'oxyde naissante minimum. Les hauteurs de barriere, obtenues a partir de la caracteristique courant-tension et de la methode de photoreponse, sont a peu pres egales.
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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem, 2003
This contribution deals with the technological realization of a special GaAs Schottky diode, based on the side-by-side technique. This is a structure, where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated.
P. Machac +3 more
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This contribution deals with the technological realization of a special GaAs Schottky diode, based on the side-by-side technique. This is a structure, where one of the dimensions of the Schottky contact is given by the thickness of the epitaxial layer on which the structure is fabricated.
P. Machac +3 more
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Capacitance of cadmium telluride Schottky diodes
Physica Status Solidi (a), 1978The ac small signal capacitance of Schottky structures obtained on undoped (106 Ωcm) and chlorine compensated (108Ωcm) p-type CdTe as well as on low resistivity (300 to 1000 Ωcm) n-type material is analyzed. For the lower resistivity p- and n-type samples, deviations from the expected behaviour are observed, which are explained in terms of a model ...
Rabin, B., Tabatabai, H., Siffert, P.
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Metallic polythiophene/inorganic semiconductor Schottky diodes
Physica B: Condensed Matter, 1993Abstract An examination of the rectification properties of organic conductor/inorganic semiconductor/metal Schottky diodes has been made, in which freshly prepared polythiophene has been used as metal, and n-Si and n-GaAs as semiconductors. Polythiophene films were electrochemically obtained on glass substrates covered with Au in acetonitrile/0.25 M ...
KOLELI, F, TURUT, A
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