Results 11 to 20 of about 943,896 (346)
Atomically thin MoS₂: a new direct-gap semiconductor. [PDF]
The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy.
K. Mak +4 more
semanticscholar +1 more source
Semiconductor spin qubits [PDF]
The spin degree of freedom of an electron or a nucleus is one of the most basic properties of nature and functions as an excellent qubit, as it provides a natural two-level system that is insensitive to electric fields, leading to long quantum coherence ...
G. Burkard +4 more
semanticscholar +1 more source
Qubits made by advanced semiconductor manufacturing [PDF]
Silicon spin qubits can be fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. Full-scale quantum computers require the integration of millions of qubits, and the potential of using ...
A. Zwerver +28 more
semanticscholar +1 more source
Phosphorene: an unexplored 2D semiconductor with a high hole mobility. [PDF]
We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated.
Han Liu +6 more
semanticscholar +1 more source
Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices [PDF]
Majoranas Arrive When a negatively charged electron meets a positron—its positively charged antiparticle—they annihilate each other in a flash of gamma rays. A Majorana fermion, on the other hand, is a neutral particle, which is its own antiparticle.
V. Mourik +6 more
semanticscholar +1 more source
Extraction and Estimation of Pinned Photodiode Capacitance in CMOS Image Sensors
The pinned photodiode capacitance extraction method proposed by Goiffon et al. is discussed, and two additional new methods are presented and analyzed; one based on the full well dependence on photon flux and the other based on the full well dependence ...
Calvin Yi-Ping Chao +5 more
doaj +1 more source
The Electronic Behavior and Mechanical Characteristics of CuGa5S8
In this theoretical study, it is presented that the electronic behavior and mechanical characteristics of CuGa5S8 compound having face centered cubic structure with space group F4 ̅3m and space number 216.
Aytaç Erkişi, Yusuf Özcan
doaj +1 more source
Resonant and nonlinear phenomena during the propagation of magnetostatic waves in multiferroid, semiconductor and metallized structures based on ferromagnetic films and magnonic crystals [PDF]
Purpose of this work is to compile an overview of a new and fruitful scientific direction in magnonics, which grew out of the works of Ph.D., Professor Yuri Pavlovich Sharaevsky, and related to the study of resonant and nonlinear phenomena during the ...
Morozova, Maria Aleksandrovna +1 more
doaj +1 more source
COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES
A Si-Ge interatomic potential was used to calculate the energy difference between strained and unstrained Ge layers on Si(001) substrates as a function of the number of layers . From this we estimate the critical thickness for dislocation nucleation to be less than 12 layers .
Clarence Cherian Matthai, P. Ashu
openaire +2 more sources
A new method for on-chip random telegraph noise (RTN) characteristic time constant extraction using the double sampling circuit in an 8.3 Mpixel CMOS image sensor is described.
Calvin Yi-Ping Chao +5 more
doaj +1 more source

