Results 231 to 240 of about 989,853 (279)

Flexible low-voltage organic transistors with a transit frequency of 40 MHz and an on/off current ratio of 10 orders of magnitude. [PDF]

Sci Adv
Zschieschang U, Klauk H.
europepmc   +1 more source

Dual‐Surface Reaction Enabled Organic–Inorganic Hybrid Photodiodes for Faint Light Detection and Imaging

Advanced Functional Materials, EarlyView.
This work proposes a dual‐surface reaction strategy to optimize the interfacial contacts in organic–inorganic photodetectors. 1,4,5,8,9,11‐hexaazatriphenylene hexacarbonitrile (HAT‐CN) and ytterbium layers are designed to react with the Si surface, thus minimizing noise.
Yibo Zhang, Gloria Vytas, Haozhe Wang, Dehui Zhang, Jiabao Shen, Chengliang Mao, Rajiv Prinja, Ali Javey, Zheng‐Hong Lu, Nazir P. Kherani   +9 more
wiley   +1 more source

Super-resolution imaging of resonance modes in semiconductor nanowires by detecting photothermal nonlinear scattering. [PDF]

Nanophotonics
Chen YA, Yen TH, Yang CY, Chen JJ, Chang CW, Nishida K, Chu SW.   +6 more
europepmc   +1 more source

Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals

Advanced Functional Materials, EarlyView.
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus, Dávid Beke, Lili Vajtai, András Jánossy, László Forró, Ferenc Simon   +5 more
wiley   +1 more source

Organic Phototransistor Photonic Synapses for Artificial Vision. [PDF]

Nanomicro Lett
Ding F, Xue D, Chi L, Huang L.
europepmc   +1 more source

Semiconductor microwave production technologies nanoelectronics and computer modeling of devices micro- and nanosystem technology

, 2010
Yu. A. Shurygin, Л. И. Бабак, N. D. Malyutin, T.N. Zaichenko   +3 more
openalex   +2 more sources

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Current Research on MoS₂-Based Heterojunction Photocatalysts for Persistent Organic Pollutants Degradation. [PDF]

Molecules
Isac L, Cazan C.
europepmc   +1 more source

A fundamental study of advanced metal/semiconductor contacts

, 2006
Wouter Leroy
openalex   +1 more source

Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study

Advanced Functional Materials, EarlyView.
This study demonstrates unprecedented control of grain boundary electrical properties in solid electrolytes. Selective diffusion of cations through grain boundaries in thin films enables 12 orders of magnitude variation in ionic resistance, proving that systematic chemical modification of grain boundary electrical properties is feasible.
Thomas Defferriere, Yong Beom Kim, Colin Gilgenbach, James M. LeBeau, WooChul Jung, Harry L. Tuller   +5 more
wiley   +1 more source