Results 51 to 60 of about 989,853 (279)

Controlling lithium cobalt oxide phase transition using molten fluoride salt for improved lithium-ion batteries

Communications Materials
LiCoO2 is a historic lithium-ion battery cathode that continues to be used today because of its high energy density. However, the practical capacity of LiCoO2 is limited owing to the harmful phase transition at high voltages, which prevents the ...
Mayumi Mikami, Jo Saito, Teruaki Ochiai, Masahiro Takahashi, Tatsuyoshi Takahashi, Yohei Momma, Kazutaka Kuriki, Rihito Wada, Kazune Yokomizo, Genki Kobayashi, Shinichi Komaba, Shunpei Yamazaki   +11 more
doaj   +1 more source

Ring and Linear Structures of CdTe Clusters

Quantum Reports
We report the results of an ab initio study of the linear and ring structures of cadmium telluride clusters [CdTe]n (CdnTen) n ≤ 10 within the generalized gradient approximation (GGA) and Purdue–Burke–Ernzerhof (PBE) parameterization with Hubbard ...
Andrii Kashuba, Ihor Semkiv, Myron Rudysh, Hryhorii Ilchuk, Pavlo Shchepanskyi   +4 more
doaj   +1 more source

Pressure Sensing of Symmetric Defect Photonic Crystals Composed of Superconductor and Semiconductor in Low-Temperature Environment

Crystals, 2023
We theoretically investigate the defect mode transmittance of light waves in superconductor–semiconductor photonic crystals and its pressure-sensing dependence.
Haiyang Hu, Xiaoling Chen, Miaomiao Zhao, Liyan Wang, Ming Fang, Dong Zhao   +5 more
doaj   +1 more source

Ab Initio Study on 3D Anisotropic Ferroelectric Switching Mechanism and Coercive Field in HfO2 and ZrO2

Advanced Functional Materials, EarlyView.
This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye, Taeyoung Jeong, Seungjae Yoon, Dohyun Kim, Yunjae Kim, Cheol Seong Hwang, Jung‐Hae Choi   +6 more
wiley   +1 more source

Optical 3-D Profilometry for Measuring Semiconductor Wafer Surfaces with Extremely Variant Reflectivities

Applied Sciences, 2019
A new surface profilometry technique is proposed for profiling a wafer surface with both diffuse and specular reflective properties. Most moiré projection scanning techniques using triangulation principle work effectively on diffuse reflective ...
Liang-Chia Chen, Duc-Hieu Duong, Chin-Sheng Chen   +2 more
doaj   +1 more source

Hybrid power semiconductor [PDF]

, 1985
The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit.
Chen, D. Y.
core   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Effect of tin on bandgap narrowing and optical properties of ZnO–Zn2SnO4 electrospun nanofibre composite

Journal of Taibah University for Science, 2020
The quest for improved visible light absorption in ZnO-based photocatalysts and photodetectors is a prevailing research problem. One method of solving this problem is by narrowing the band gap of this material well into the range of visible light energy.
Hakeem Sanya Bolarinwa, Michael Ugwu Onuu, Lukman Olalekan Animashaun, Samson Oluwagbemiga Alayande, Adeniyi Yisau Fasasi   +4 more
doaj   +1 more source

Radiation hardening of metal-oxide semi-conductor (MOS) devices by boron [PDF]

, 1974
Technique using boron effectively protects metal-oxide semiconductor devices from ionizing radiation without using shielding materials.
Danchenko, V.
core   +1 more source

Synchrotron Radiation for Quantum Technology

Advanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader, Sakura Pascarelli, Klaus Attenkofer, Anna A. Makarova, Karsten Holldack, Kai Rossnagel, Kristiaan Temst, George Kourousias, Stefano Carretta, Caterina Biscari, Helmut Dosch   +10 more
wiley   +1 more source