Results 71 to 80 of about 989,853 (279)

Modeling of graphene wrapped indium antimonide nanowire as thermo-optical waveguide

Materials Research Express
In this research work, the fiber modes supported by the graphene-wrapped indium antimonide nanowire have been examined theoretically. The indium antimonide (InSb) is a semiconductor material, which has temperature-sensitive optoelectronic properties.
Muhammad Sajid, Muhammad Zeshan Yaqoob, Majeed A S Alkanhal, Abdul Ghaffar, Ahtisham Ali, Yasin Khan   +5 more
doaj   +1 more source

Copper Doping Enhances the Activity and Selectivity of Atomically Precise Ag44 Nanoclusters for Photocatalytic CO2 Reduction

Advanced Functional Materials, EarlyView.
By a simple anti‐Galvanic reaction, up to six copper atoms could be preferably doped into the Ag2(SR)5 staple motifs and Ag20 dodecahedral shell of an atomically precise Ag44(SR)30 nanocluster. When anatase TiO2 is used as substrate, the (AgCu)44/TiO2 photocatalyst exhibited much improved activity in photocatalytic CO2 reduction compared to Ag44/TiO2 ...
Ye Liu, Xi Zheng, Xiufan Liu, Tengyuan Gao, Nicola Pinna, Yu Wang   +5 more
wiley   +1 more source

Strain Relaxation of Al‐Rich α‐(AlGa)2O3 and α‐Al2O3/Ga2O3 Superlattice on m‐Plane Sapphire Substrates by Plasma‐Assisted Molecular Beam Epitaxy

Advanced Materials Interfaces
The strain relaxation of Al‐rich α‐(AlxGa1‐x)2O3 single layers with x > 0.6 and an α‐Al2O3/Ga2O3 superlattice structure grown on m‐plane sapphire substrates by molecular beam epitaxy is investigated.
Riena Jinno, Hironori Okumura
doaj   +1 more source

All-Inorganic Perovskite CsPb2Br5 Microsheets for Photodetector Application

Frontiers in Physics, 2018
Lead-halide perovskites have emerged as one kind of important optoelectronic materials with excellent performance in photovoltaic and light-emitting diode applications.
Xiaosheng Tang, Shuai Han, Zhiqiang Zu, Wei Hu, Dan Zhou, Juan Du, Zhiping Hu, Shiqi Li, Zhigang Zang   +8 more
doaj   +1 more source

Probing non-Abelian statistics with Majorana fermion interferometry in spin-orbit-coupled semiconductors

, 2011
The list of quantum mechanical systems with non-Abelian statistics has recently been expanded by including generic spin-orbit-coupled semiconductors e.g., InAs) in proximity to a s-wave superconductor.
Sarma, S. Das, Sau, Jay D., Tewari, Sumanta   +2 more
core   +1 more source

Engineering Porous Hollow Metal‐Poly(Heptazine Imide) Spheres: An Optimized Synthetic Strategy for Controlling Surface, Morphology, and Properties

Advanced Functional Materials, EarlyView.
Hollow poly(heptazine imide) spheres are prepared through a novel approach that integrates hard templating with ionothermal synthesis. This method enables precise control over surface area, pore volume, hydrophilicity, light absorption, band position, and metal composition. These tunable properties facilitate the customized design of semiconductors for
Lingli Ni, Erik Troschke, Henrik Vorwerk, Shiva Shahbazi Avarvand, Andreas Stihl, Nadzeya Brezhneva, Marius Hermesdorf, Desirée Leistenschneider, Felix H. Schacher, Jacob Schneidewind, Martin Oschatz   +10 more
wiley   +1 more source

Electronic and magnetic properties of ABO₃ perovskites (A - Ca, Ce, Y, Na; B - Ti, Nb, Fe, Mn, Ta; O)

Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, 2020
The article presents the results of quantum-mechanical computer simulation. The purpose of studying the electronic and magnetic properties of twenty crystalline structures based on perovskites of transition metals with the general formula ABO3 (where A -
P. A. Praskurava, D. S. Hvazdousky, M. S. Baranava, V. R. Stempitsky   +3 more
doaj   +1 more source

1,2,5,6‐Naphthalene Diimides: A Class of Promising Building Blocks for Organic Semiconductors^† [PDF]

, 2022
Zheng Zhao, Congwu Ge, Xueqian Zhao, Jintao Huang, Xike Gao   +4 more
openalex   +1 more source

Spin diffusion and injection in semiconductor structures: Electric field effects

, 2002
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by
A. Fert, A. G. Aronov, A. T. Hanbicki, B. T. Jonker, D. Grundler, D. L. Smith, D. T. Pierce, E. I. Rashba, G. Kirczenow, G. Schmidt, G. Schmidt, H. J. Zhu, I. D’Amico, I. I. Mazin, I. Malajovich, I. Ẑutić, I. Ẑutić, J. C. Egues, J. C. Egues, J. M. Kikkawa, J. M. Kikkawa, J. M. Kikkawa, K. A. Kilian, M. E. Flatté, M. E. Flatté, M. E. Flatté, O. Wunnicke, P. C. van Son, R. Fiederling, R. J. Soulen, S. A. Wolf, S. Hershfield, T. Sogawa, V. F. Motsnyi, X. Hao, Y. Ohno, Yu. V. Sharvin, Z. G. Yu, Z. G. Yu   +38 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source