Results 71 to 80 of about 986,480 (326)

Back wall solar cell [PDF]

open access: yes, 1978
A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to ...
Brandhorst, H. W., Jr.
core   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

open access: yesAdvanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu   +2 more
wiley   +1 more source

Isotope effect suggests site‐specific nonadiabaticity on Ge(111)c(2×8)

open access: yesNatural Sciences
Energy transferred in atom‐surface collisions typically depends strongly on projectile mass, an effect that can be experimentally detected by isotopic substitution.
Kerstin Krüger   +6 more
doaj   +1 more source

Photoinduced current in molecular conduction junctions with semiconductor contacts

open access: yes, 2012
We propose a new approach to coherent control of transport via molecular junctions, which bypasses several of the hurdles to experimental realization of optically manipulated nanoelectronics noted in the previous literature. The method is based on the ap-
Bogdanov   +9 more
core   +1 more source

Ab Initio Study on 3D Anisotropic Ferroelectric Switching Mechanism and Coercive Field in HfO2 and ZrO2

open access: yesAdvanced Functional Materials, EarlyView.
This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye   +6 more
wiley   +1 more source

Multiport semiconductor devices [PDF]

open access: yes, 1970
Device, made of a variety of semiconductors, incorporates three or more terminals. Between at least two terminals, switching action occurs. The other terminal pair performs either another switching function or a control function.
Holmstrom, F. R., Rindner, W.
core   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

open access: yesAdvanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai   +8 more
wiley   +1 more source

Semiconductor Membrane Exfoliation: Technology and Application

open access: yesAdvanced Electronic Materials
Flexible semiconductor film‐based optoelectronic devices have garnered significant attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart healthcare due to their wide range of applications.
Hongliang Chang   +7 more
doaj   +1 more source

Strain tuning of topological band order in cubic semiconductors

open access: yes, 2012
We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under ...
D. J. Singh   +8 more
core   +1 more source

Synchrotron Radiation for Quantum Technology

open access: yesAdvanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader   +10 more
wiley   +1 more source

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