Results 121 to 130 of about 103,204 (298)

Conductive Bonding and System Architectures for High‐Performance Flexible Electronics

Advanced Functional Materials, EarlyView.
This review outlines bonding technologies and structural design strategies that support high‐performance flexible and stretchable electronics. Bonding approaches such as surface‐activated bonding and anisotropic conductive films, together with system‐level architectures including buffer layers and island‐bridge structures, possess distinct mechanical ...
Kazuma Nakajima, Kenjiro Fukuda
wiley   +1 more source

Enhanced Simulation Accuracy and Design Optimization in Power Semiconductors Through Individual Aluminum Metallization Layer Modeling

Energies
This study investigates the impact of modeling the aluminum (Al) metallization layer as an integrated part of the chip model, versus as an individual component, on the results of electrical–thermal analysis of power semiconductor packages using Finite ...
Na-Yeon Choi, Sang-Gi Kim, Sung-Uk Zhang
doaj   +1 more source

On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs [PDF]

, 2007
Angelini, A., Bonani, Fabrizio, Cappelluti, Federica, Furno, M., Ghione, Giovanni, Pirola, Marco   +5 more
core   +1 more source

Electric Field‐Dependent Conductivity as Probe for Charge Carrier Delocalization and Morphology in Organic Semiconductors

Advanced Functional Materials, EarlyView.
Applying a high electric field to a doped organic semiconductor heats up the charge carrier distribution beyond the lattice temperature, enhancing conductivity. It is shown that the associated effective temperature can be used to extract the effective localization length, which is a characteristic length scale of charge transport and provides ...
Morteza Shokrani, Felix Maximilian Graf, Anton Kompatscher, Dennis Derewjanko, Martijn Kemerink   +4 more
wiley   +1 more source

Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications [PDF]

, 2003
Bonani, Fabrizio, Donati Guerrieri, Simona, Ghione, Giovanni   +2 more
core   +1 more source

Indirect Band Edge and Chain‐Locked Linear Dichroism in the Quasi‐1D Van der Waals Antiferromagnet AgCrP2S6

Advanced Functional Materials, EarlyView.
AgCrP2S6 reveals a momentum‐indirect band edge (≈1.35 eV) and chain‐locked linear dichroism: the first direct transitions emerge at 1.6–1.8 eV for E||a. Resonant Raman and photoemission corroborate this assignment. In ACPS/graphene heterostructures, photocurrent turns on above ≈1.5 eV and follows the same polarization selection rules (anisotropy ≈0.53),
Oleksandr Volochanskyi, Sabrina Juergensen, Václav Valeš, Kumari Surbhi, Martin Mergl, Kseniia Mosina, Zdeněk Sofer, Jan Honolka, Patryk Kusch, Martin Kalbáč   +9 more
wiley   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation [PDF]

, 2001
Bonani, Fabrizio, Donati Guerrieri, Simona, Ghione, Giovanni, Pirola, Marco   +3 more
core   +1 more source

Overcoming Debye Length Limitations in Electrolyte‐Gated Transistor Biosensors Using Nanoscale‐Grooved Oxide Semiconductors Fabricated by Thermal Nanoimprint Lithography

Advanced Functional Materials, EarlyView.
Nanoscale‐grooved indium gallium oxide (IGO) semiconductors, patterned via thermal nanoimprint lithography (NIL) using CD/DVD templates, are integrated into electrolyte‐gated transistor biosensors to overcome Debye length limitations. Precisely engineered concave–convex nanostructures modulate local electrostatic potentials, extend the effective Debye ...
Jong Yu Song, Gyeongmin Lee, Dong Hyung Kim, Woo Lee, Eun‐Ah You, Young‐Geun Ha   +5 more
wiley   +1 more source

Thermal modeling of power semiconductor devices

Electronics and Communications, 2016
В даній статті висвітлені перспективні методи електротеплового моделювання за допомогою складення еквівалентної схеми, побудови моделей в системі Simulink та поєднання пакетного середовища Matlab з програмою, написаною мовою С++ для більш складних циклів та обчислень.
openaire   +2 more sources