Results 221 to 230 of about 3,944,515 (307)

Efficient and Accurate Modeling of Anisotropic Electrostatic Landscapes in Amorphous Organic Semiconductor Films. [PDF]

J Chem Theory Comput
Kim Y, Son J, Moon G, Choi H, Gil J, Lee JH, Jung Y.   +6 more
europepmc   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

Development of a Milli-Kelvin Thermostatic Bath for High-Precision Temperature Sensor Calibration. [PDF]

Sensors (Basel)
Zhang Y, Xiong Y, Cheng J, Wu D, Sun J, Lu Y, Zhou J, Wang C, Shan J, Zhou B.   +9 more
europepmc   +1 more source

Adsorption‐Engineered Hydrocarbon Ionomers for Durable Proton‐Exchange Membrane Fuel Cells

Advanced Materials, EarlyView.
Hydrocarbon ionomers suffer from oxidation‐driven interfacial degradation in PEM fuel cell cathodes, leading to catalyst instability. Here, adsorption‐engineered poly(fluorene) ionomers decouple interfacial anchoring from oxidative degradation, enabling strong catalyst–ionomer interactions while resisting electrochemical oxidation.
Heemin Park, Kate Chen, Su Min Ahn, Hengquan Guo, Cy Fujimoto, Jong‐Ho Choi, Lynda Amichi, Danah Kim, Seung Geol Lee, Xiaojing Wang, Jacob S. Spendelow, Sun Young Kang, Panagiotis Bexis, Eun Joo S. Park, Yu Seung Kim   +14 more
wiley   +1 more source

Flexible organic thin-film transistors for all-in-one retinomorphic acceleration enabled by inorganic-organic heterogeneous dielectrics. [PDF]

Nat Commun
Zhao Y, Zhu D, Jiang T, Wang L, Wang R, Wang G, Duan Y, Ling H, Ji D, Hu W.   +9 more
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications. [PDF]

Sci Rep
Ashok T, Pandey CK.
europepmc   +1 more source

Analog Tensor Processing With Carbon Nanotube In‐Memory Matrix Multiplications for Edge Computer Vision Acceleration

Advanced Materials, EarlyView.
This work prototypes a carbon nanotube‐based analog tensor core that performs in‐memory, parallel visual processing. Integrating non‐volatile memories and compact circuits, the core enables high‐speed analog matrix multiplications and can demonstrate accurate three dimensional (3D) spatial transformation and edge detection. With lightweight design, the
Jingfang Pei, Lekai Song, Songwei Liu, Yingyi Wen, Yaoqiang Zhou, Yang Liu, Pengyu Liu, Wenyu Cui, Xin Lu, Teng Ma, Zegao Wang, Guohua Hu   +11 more
wiley   +1 more source

Photonic and Optoelectronic Devices and Systems, 4th Edition. [PDF]

Micromachines (Basel)
Butt MA.
europepmc   +1 more source

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

Advanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho, Youngmin Lee, Jaeseok Huh, Jaehan Park, Hyeong‐Jun Son, Dowoo Pyeon, Mann‐Ho Cho   +6 more
wiley   +1 more source