Results 241 to 250 of about 3,944,515 (307)

Predictive modeling of drain current in advanced FET architectures using ML-based TCAD calibration. [PDF]

Sci Rep
Mohapatra S, Shekhar R, Jadhav A, Jena B.   +3 more
europepmc   +1 more source

Local bandgap and optoelectronic measurement using monochromated STEM-VEELS: fundamentals, challenges, and recent advances. [PDF]

Appl Microsc
Jung HJ.
europepmc   +1 more source

Metal organic semiconducting structures for electronic band engineering and optoelectronic uses. [PDF]

iScience
Bach LG, Long LP, Kien Hao VT, Thuy Huynh LT.   +3 more
europepmc   +1 more source

Giant bulk photovoltaic effect in an iron-based magnetic semiconductor. [PDF]

Nat Commun
Cheng M, Wang Z, Ji J, Wang J, Mo Y, Huang Y, Zhang Z, Lu C, Yu S, Dong X, Hu L, Zhang X.   +11 more
europepmc   +1 more source

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Fitting considerations of polynomial device models [semiconductor device modeling]

Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03., 2003
In this paper, the fitting and usefulness of polynomial device models are discussed. It is shown that a polynomial model can provide an accurate AC fit of device nonlinearities and hence give accurate results in distortion simulations up to 35 dBc IM3 levels.
Timo Rahkonen, Antti Heiskanen
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Numerical modeling of advanced semiconductor devices

IBM Journal of Research and Development, 1992
Numerical modeling of the electrical behavior of semiconductor devices is playing an increasingly important role in their development. Examples that pertain to advanced MOSFETs and bipolar transistors are presented to illustrate the importance of taking into account three-dimensional as well as nonequilibrium and nonlocal physical phenomena to ...
Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh   +9 more
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On the physics and modeling of small semiconductor devices—I

Solid-State Electronics, 1980
Abstract Current LSI technology has progressed rapidly and is pushing toward fabrication of sub-micron dimensioned devices. Several authors have previously used static characteristics, power dissipation, noise, and packing density to look at limiting properties of small devices, although the actual device physics was not considered in detail.
J.R. Barker, D.K. Ferry
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Fourier method modeling of semiconductor devices

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1990
A high-order approach to a numerical modeling of semiconductor devices is presented. The method combines the classical Fourier-series Galerkin procedure, a special matrix calculus, and fast numerical pseudospectral techniques. The proposed algorithm renders the exact solution (machine precision) of the semiconductor equations in the closed form of a ...
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Modeling of discrete semiconductor devices

Microelectronics Reliability, 1984
Abstract Numerical modeling established itself as a powerful tool for the analysis and design of discrete semiconductor devices and integrated circuits. The paper reviews the basic semiconductor equations, the physical internal mechanisms implemented in the present simulation programs and the numerical methods used to solve the nonlinear ...
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