Results 241 to 250 of about 12,730 (315)

Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs. [PDF]

Commun Eng
Lee KW, Kim IK, Jung SW, Jang MS, Hong SM.   +4 more
europepmc   +1 more source

Weaving Intelligence: Thermally Drawn Multimaterial Fibers Toward AI‐Enabled Smart Textiles

Advanced Materials, EarlyView.
Thermally drawn multimaterial fibers are rapidly advancing as intelligent structural units for next‐generation smart textiles. Integrating multimaterial architectures with neuromorphic and spiking‐neural‐network principles enables fabrics that can sense, compute, and adapt autonomously.
Vuong Dinh Trung, Jiaxiang Yi, Hieu Nguyen‐Duc, Tien Nu Hoang Lo, Weili Zhao, Chaoqun Dong, Fabien Sorin, Baris Caglar, Lei Wei, Tung Nguyen‐Dang   +9 more
wiley   +1 more source

Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
europepmc   +1 more source

Tailoring Phonon‐Driven Responses in α‐MoO3 through Isotopic Enrichment

Advanced Materials, EarlyView.
ABSTRACT The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material, α‐MoO3, an orthorhombic crystal boasting three distinct phonon dispersions, provides three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the ...
Thiago S. Arnaud, Ryan W. Spangler, Johnathan D. Georgaras, Jonah B. Haber, Daniel Hirt, Maximilian Obst, Gonzalo Álvarez‐Pérez, Mackey Long III, Felix G. Kaps, Jakob Wetzel, Courtney Ragle, John E. Buchner, Youngji Kim, Aditha S. Senarath, Richarda Niemann, Mingze He, Giulia Carini, Unai Arregui‐Leon, Akash C. Behera, Ramachandra Bangari, Nihar Sahoo, Niels C. Brumby, J. Michael Klopf, Martin Wolf, Lukas M. Eng, Susanne C. Kehr, Thomas G. Folland, Alexander Paarmann, Patrick E. Hopkins, Felipe Jornada, Jon‐Paul Maria, Joshua D. Caldwell   +31 more
wiley   +1 more source

Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and Computing. [PDF]

ACS Nano
Das A, Senapati A, Kumar G, Lou ZF, Müller J, Maskeen JS, Chang YT, Tewari M, Agarwal A, Paul A, Raffel Y, Maikap S, Kao KH, Agarwal T, Lashkare S, Lu D, Larrieu G, Lee MH, De S.   +18 more
europepmc   +1 more source

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Tuning the Air Stability of N-Type Semiconductors via Poly(2-vinylpyridine): The Importance of Humidity and Molecular Weight. [PDF]

Small Sci
Dickson LE, DiPalo VA, Plint T, Udaya Mohanan K, Manion JG, Kim CH, Lessard BH.   +6 more
europepmc   +1 more source

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance. [PDF]

Sci Rep
Kumar P, Askari SSA, Das MK.
europepmc   +1 more source

Dirac metallic FeB₂-induced low Schottky barrier and electrically tunable Schottky contact in FeB₂/MoS₂ van der Waals heterostructure. [PDF]

Nanoscale Adv
Nhan TT, Cuong NQ, Nguyen CV, Phuc HV.
europepmc   +1 more source