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Modeling of Advanced Semiconductor Devices
ECS Transactions, 2007Aggressive downscaling of modern semiconductor devices forces development engineers to question the validity of existing modeling approaches. Models for carrier transport have to be considered which are applicable on the transition into the quantum regime.
Enzo Ungersboeck +3 more
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Semiconductor laser device modeling
AIP Conference Proceedings, 2000The semiconductor laser offers enormous advantages as a practical device in many technological applications because of its very large gain per unit length. This translates into compact size, making it an ideal system for integration into complex integrated opto-electronic systems networks. However, this advantage comes at a price.
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Massively parallel methods for semiconductor device modelling
Computing, 1996zbMATH Open Web Interface contents unavailable due to conflicting licenses.
R. K. Coomer, Ivan G. Graham
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On Modelling of Inhomogeneous Semiconductor Devices
Physica Status Solidi (a), 1993The nonequilibrium electron and hole density equations for the modelling of inhomogeneous semiconductor devices are reexamined. The electron and hole densities are expressed in terms of their modified effective density of states parameters. These parameters are calculated for the case of parabolic band structure and constant relaxation time.
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ON THE RELAXATION LIMITS OF THE HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
Mathematical Models and Methods in Applied Sciences, 2002The initial-boundary value problem of a simplified one-dimensional hydrodynamic model for semiconductors is considered. The global weak solution and its relaxation limit are obtained through using the compensated compactness methods. The traces of weak solutions are also discussed.
Qiu, Youchun, Zhang, Kaijun
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Methods and tools for characterisation of semiconductor device models
1998 IEEE International Conference on Electronics, Circuits and Systems. Surfing the Waves of Science and Technology (Cat. No.98EX196), 2002Rapid developments in semiconductor technologies create new needs for devices characterisation and modelling methods. In this paper we present a characterisation and modelling methodology which provides accurate device models for computer-aided design and necessary feedback for technology process analysis.
Agnieszka Konczykowska +1 more
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Mathematical Modeling of Semiconductor Devices
1986In this Chapter we shall formulate the system of partial differential equations, which describes potential distribution, carrier concentrations and current flow in semiconductor devices. We shall supplement the system by boundary conditions representing the interaction of the device with the outer world and discuss the modeling of physical parameters ...
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Noise modeling of semiconductor devices
6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003., 2004Small-signal noise models for semiconductor devices, such as diodes, bipolar junction transistors and field effect transistors, have been synthesized in this paper. The modeling has been performed on the basis of mathematical equations. The models take into consideration all kinds of noises: thermal noise, shot noise, and flicker noise. The models have
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Numerical algorithms for modelling microwave semiconductor devices
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 1995AbstractThis paper presents an analysis of the numerical algorithms used to model microwave semiconductor devices. A comparison is made of the relative merits and features of the more popular finite difference schemes. A new generalized Scharfetter–Gummel formulation is presented which is compatible with drift diffusion and energy‐transport ...
COLE, EAB, SNOWDEN, CM
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Traditional Modelling of Semiconductor Devices
1995The study of semiconductor devices spans less than 50 years and the evolution of modelling techniques occupies an even shorter interval. Traditionally, the electrical properties of semiconductor devices have been modelled using equivalent circuit models, where the electrical behaviour of the device at the connecting terminals is represented by a ...
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