Results 231 to 240 of about 3,944,515 (307)

Analytical Investigation of Non-Local Optoelectronic Photo-Thermoelastic Response in Fiber-Reinforced Anisotropic Silicon Using an Eigenvalue Framework. [PDF]

Nanomaterials (Basel)
Emam A, Yusuf M, El-Dali A, Mrzog Alaofi Z.   +3 more
europepmc   +1 more source

2D Abrupt Nano‐Junctions Blending sp–sp2 Bonds on Atomically Precise Heterostructures

Advanced Materials, EarlyView.
A lateral heterostructure between atomically precise sp–sp2$^2$ metalated graphdiyne and sp2$^2$ graphene nanoribbons is realized by on‐surface synthesis and investigated by STM and DFT. The impact of on‐surface synthesis byproducts on covalent junction formation yield is unveiled.
Alice Cartoceti, Simona Achilli, Masoumeh Alihosseini, Adriana E. Candia, Enrico Beltrami, Paolo D'Agosta, Alessio Orbelli Biroli, Francesco Sedona, Andrea Li Bassi, Jorge Lobo‐Checa, Carlo S. Casari   +10 more
wiley   +1 more source

Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors. [PDF]

Materials (Basel)
Alshammari N, Rao MV, Li Q.
europepmc   +1 more source

Energy-balance modeling of short channel single-GB thin film transistors

, 2006
Mizuta, Hiroshi, Walker, P.
core  

Extreme Bond Ionicity in Mg─Te Chalcogenides for Ultrathin Low Voltage Selector‐Only Memory beyond the Leakage Scaling Limit

Advanced Materials, EarlyView.
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo, Dongmin Kim, Yu Bin Park, Jangseop Lee, Tae Hoon Lee, Hyunsang Hwang   +5 more
wiley   +1 more source

Thermally Stable HfO₂-Based Ferroelectric Transistors for CMOS-Compatible Energy-Efficient Neuromorphic Integrated Circuits. [PDF]

Nanomaterials (Basel)
Tikhonenko FV, Tarkov M, Popov VP, Miakonkikh AV, Rudenko KV.   +4 more
europepmc   +1 more source

Energy-balance modeling of short channel single-GB thin film transistors

, 2005
Mizuta, Hiroshi, 水田, 博, Walker, P.
core  

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Atomic Force Microscopy (AFM)-Based Metrology for Advanced Etching in Three-Dimensional Integrated Circuits. [PDF]

Micromachines (Basel)
Chang J, Wang S, Liang S, Feng X, Zhao W.   +4 more
europepmc   +1 more source

A Universal Deep Learning Model for Predicting Detection Performance and Single-Event Effects of SPAD Devices. [PDF]

Micromachines (Basel)
Chen Y, Huang J, Zeng Y, Jiang Y, Wang S, Chen S, Liu H.   +6 more
europepmc   +1 more source